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Beta emission channeling patterns from 75Ge and 75Ga in diamond

Manuscript on "Structural formation yield of GeV centers from implanted Ge in diamond" 2-dimensional experimental beta emission channeling patterns from beta-decay of 75 Ge following 75Ga implanted in diamond as shown in Figures 2,3,4,8 of the mentioned manuscript 20x20 matrix of counts within position-sensitive detector, pixel size 1.3x1.3 mm2 at 60 cm distance from sample For <211>, <100> and <111> patterns, major horizontal planes are (110), while for the <110> patterns horizontal plane is (100) and vertical (110) Ti = implantation temperature, Ta = annealing temperature, room temperature RT=30°C    Figure 2: 75Ge patterns from "higher fluence" sample (~2E13 cm-2 per implantation step): (a) vat4579a.csv: Ti=RT <110> (b) vat4577a.csv: Ti=RT <211> (c) vat4576a.csv: Ti=RT <100> (d) vat4578a.csv: Ti=RT <111>   Figure 3: 75Ge patterns from "higher fluence" sample (~2E13 cm-2 per implantation step): (a) vat4600a.csv: Ti=RT Ta=900°C <110> (b) vat4598a.csv: Ti=RT Ta=900°C <211> (c) vat4597a.csv: Ti=RT Ta=900°C <100> (d) vat4599a.csv: Ti=RT Ta=900°C <111>   Figure 4: 75Ge patterns from "lower fluence" sample (~2E12 cm-2 per implantation step): (a) vat4679a.csv: Ti=900°C <110> (b) vat4677a.csv: Ti=900°C <211> (c) vat4676a.csv: Ti=900°C <100> (d) vat4678a.csv: Ti=900°C <111>   Figure 8: 75Ga patterns (measured during implantation) (a) vat4660a.csv: Ti=30°C <100> "lower fluence" sample (b) vat4581a.csv: Ti=30°C <100> "higher fluence" sample (c) vat4601a.csv: Ti=300°C <100> "higher fluence" sample (d) vat4617a.csv: Ti=600°C <100> "higher fluence" sample

ShareScore

36/100

Overall dataset sharing score

Score breakdown

These five areas show where the dataset supports — or may limit — practical reuse.

Stewardship: 4
Harmonization: 4
Access: 20
Reuse readiness: 8
Engagement: 0