Etching of Nitrides-NbN Heterostructures

<p>Niobium Nitride (NbN) is metallic at room temperature. NbN / III-N heterostructures are of interest for<br> new devices applications such as the Metal Base Transistor (MBT). Niobium Nitride etching in fluorine plasma is documented by Reactive Ion Etching (RIE). In this document we present the etching of a III-Nitride NbN heterostructure with fluorine<br> chemistry Inductively Coupled Plasma (ICP).</p>