IGBT accelerated aging data set.

Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and in some cases, high-speed measurements of gate voltage, collector-emitter voltage and collector current are available. The data set is provided by the Prognostics CoE at NASA Ames.