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38 results for “photoluminescence”

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zenodo36/100

300 K time-resolved photoluminescence on sample set- Buffer temperature series-Sample C3206

<p>Raw data of time-resolved photoluminescence measurements on the sample C3206 (buffer grown at 870&nbsp;&deg;C) in the buffer temperature sample set</p>

opencc-by-4.0Aug 2023View details →
dryad36/100

Vocal range and ultraviolet-induced photoluminescence in gliding mammals and their relatives

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publicFeb 2024View details →
dryad36/100

Coupling gel electrophoresis with photoluminescence imaging reveals biochrome complexes in modern and fossil shells

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publicSep 2025View details →
dryad36/100

Circularly polarized photoluminescence from nanostructured arrays of light emitters

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publicFeb 2023View details →
dryad32/100

Photoluminescence processes in τ-phase Dy3+/Tb3+-codoped Ba1.3Ca0.7SiO4 phosphors for solid-state lighting

<p>The τ-phase-Ba<sub>1.3</sub>Ca<sub>0.7</sub>SiO<sub>4</sub> phosphors co-doped with 3 mol% Dy<sup>3+</sup> and ~1-5 mol% Tb<sup>3+</sup> trivalent rare-earth ions were prepared by the gel-combustion method. The structure-property relation of the samples was examined by X-ray diffraction, scanning electron microscopy, and spectrophotometer. Here, the effect of Tb<sup>3+</sup>'s concentration on the spectroscopic properties of Dy<sup>3+</sup>/Tb<sup>3+</sup> co-doped Ba<sub>1.3</sub>Ca<sub>0.7</sub>SiO<sub>4</sub> phosphors was explored by using the photoluminescence excitation, emission, and decay curves. Importantly, the photonic energy transfer from (Dy<sup>3+</sup>: <sup>4</sup>F9/2 + Tb<sup>3+</sup>: <sup>7</sup>F<sub>6</sub>) to (Dy<sup>3+</sup>: <sup>6</sup>H<sub>15/2</sub> + Tb<sup>3+</sup>:<sup>5</sup>D<sub>4</sub>) was observed, in which the Dy<sup>3+</sup> ions acts as a light-emitting donor whereas the Tb<sup>3+</sup> ions as a light-absorbing acceptor, resulting in an enhanced emission from the co-doped Ba<sub>1.3</sub>Ca<sub>0.7</sub>SiO<sub>4</sub>: Dy<sup>3+</sup>/Tb<sup>3+</sup> phosphors. Finally, the chromaticity coordinates were determined from the measured emission spectra, locating at the green and white light regions. This observation indicates that the characteristic emission color could be tuned from white to green by varying Tb<sup>3+</sup> concentrations under ultraviolet light.</p>

opencc-zeroMay 2022View details →
zenodo32/100

data and codes for paper "Understanding power-law photoluminescence decays and bimolecular recombination in lead-halide perovskites"

<p>These are the data and Matlab codes used in the paper "Understanding power-law photoluminescence decays and bimolecular recombination in lead-halide perovskites".</p>

opencc-by-4.0Apr 2024View details →
zenodo32/100

Dataset for: Gülmüs M. et al. "Photoluminescence modal splitting via strong coupling in hybrid Au/WS2/GaP nanoparticle-on-mirror cavities"

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opencc-by-4.0Sep 2024View details →
zenodo32/100

Rise and Decay of Photoluminescence in Upconverting Lanthanide-Doped Nanocrystals

<p>Main-text figure data</p>

opencc-by-4.0Oct 2024View details →
dryad32/100

Photoluminescence processes in τ-phase Dy3+/Tb3+-codoped Ba1.3Ca0.7SiO4 phosphors for solid-state lighting

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publicJun 2022View details →
dryad28/100

Data from: Synthesis and photoluminescence properties of silica-modified SiO2@ANA-Si-Tb@SiO2, SiO2@ANA-Si-Tb-L@SiO2 core-shell-shell nanostructured composites

Three novel core-shell nanostructured composites SiO2@ANA-Si-Tb, SiO2@ANA-Si-Tb-L (L = second ligand) with SiO2 as the core and terbium organic complex as the shell were successfully synthesized. The core and shell were connected together by covalent bonds. The terbium ion was coordinated with organic ligand forming terbium organic complex in the shell layer. The organosilane (HOOCC5H4NN(CONH(CH2)3Si(OCH2CH3)3)2 (abbreviated as ANA-Si) was used as the first ligand and 1, 10-phenanthroline (phen) or 2-thenoyltrifluoroacetone (TTA) was used as the second ligand. Furthermore, silica-modified SiO2@ANA-Si-Tb@SiO2, SiO2@ANA-Si-Tb-L@SiO2 core-shell-shell nanostructured composites were also synthesized by sol-gel chemical route, which involved the hydrolysis and polycondensation processes of tetraethoxysilane (TEOS) using cetyltrimethyl ammonium bromide (CTAB) as a surface-active agent. An amorphous silica shell was coated around the SiO2@ANA-Si-Tb, SiO2@ANA-Si-Tb-L core-shell nanostructured composites. The core-shell and core-shell-shell nanostructured composites exhibited excellent luminescence in solid state. Meanwhile, an improved luminescent stability property of the core-shell-shell nanostructured composites was observed for the aqueous solution. This type of core-shell-shell nanostructured composites exhibited bright luminescence, high stability and good solubility, which may present potential applications in the fields of optoelectronic devices, bio-imaging, medical diagnosis, and study on the structure of function composite materials.

opencc-zeroMay 2019View details →
zenodo28/100

Supplementary Material: Low temperature photoluminescence investigation of light-induced degradation in boron doped CZ-silicon

<p>Dataset from the paper:&nbsp;Low temperature photoluminescence investigation of light-induced degradation in boron doped CZ-silicon.</p>

openMar 2022View details →
zenodo28/100

Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

<p>Although it is theoretically expected that all organic semiconductors support ambipolar charge transport, most organic transistors either transport holes or electrons effectively. Single-layer ambipolar organic field-effect transistors enable the investigation of different mechanisms in hole and electron transport in a single device since the device architecture provides a controllable planar pn-junction within the transistor channel. However, a direct comparison of the injection barriers and of the channel conductivities between electrons and holes within the same device cannot be measured by standard electrical characterization. This article introduces a novel approach for determining threshold gate voltages for the onset of the ambipolar regime from the position of the pn-junction observed by photoluminescence electro-modulation (PLEM) microscopy. Indeed, the threshold gate voltage in the ambipolar bias regime considers a vanishing channel length, thus correlating the contact resistance. PLEM microscopy is a valuable tool to directly compare the contact and channel resistances for both carrier types in the same device. The reported results demonstrate that designing the metal/organic&ndash;semiconductor interfaces by aligning the bulk metal Fermi levels to the highest occupied molecular orbital or lowest unoccupied molecular orbital levels of the organic semiconductors is a too simplistic approach for optimizing the charge-injection process in organic field-effect devices</p>

opencc-by-4.0Sep 2018View details →
zenodo28/100

Dataset for "Spatially resolved photoluminescence analysis of the role of Se in CdSexTe1−x thin films"

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opencc-by-4.0Sep 2024View details →
dryad28/100

Data from: Synthesis and photoluminescence properties of silica-modified SiO2@ANA-Si-Tb@SiO2, SiO2@ANA-Si-Tb-L@SiO2 core-shell-shell nanostructured composites

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publicMay 2019View details →
zenodo20/100

Extracting phonon coupling parameters from multi color center photoluminescence

<p>Scripts using the VKMS.jl software package and datasets generated for and analyzed in the paper "Extracting phonon coupling parameters from multi color center photoluminescence" which is currently under review.</p>

restrictedSep 2023View details →
zenodo16/100

A comparative study of epitaxial InGaAsBi/InP structures using Rutherford Backscattering Spectrometry, X-ray diffraction and Photoluminescence techniques.

<p>In this work we used a combination of photoluminescence (PL), high resolution X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) techniques to investigate material quality and structural properties of MBE-grown InGaAsBi samples (with and without an InGaAs cap layer) with targeted bismuth composition in the 3-4% range. XRD data showed that the InGaAsBi layers are more homogenous in the uncapped samples. For the capped samples, the growth of the InGaAs capped layer at higher temperature affects the quality of the InGaAsBi layer and bismuth distribution in the growth direction. Low temperature PL exhibited multiple emission peaks; the peak energies, widths and relative intensities were used for comparative analysis of the data in line with the XRD and RBS results. RBS data at random orientation together with channelled measurements allowed both an estimation of the bismuth composition as well as analysis of the structural properties. The RBS channelling showed evidence of higher strain due to possible anti-site defects in the capped samples grown at a higher temperature. It is also suggested that the growth of the capped layer at high temperature causes deterioration of the bismuth-layer quality. The RBS analysis demonstrated evidence of a reduction of homogeneity of uncapped InGaAsBi layers with increasing bismuth concentration. The uncapped higher bismuth concentration sample showed less defined channelling dips suggesting poorer crystal quality and clustering of bismuth on the sample surface.</p>

restrictedSep 2019View details →
zenodo12/100

Dataset for the study: "Engineering the Surface of Carbon Dots for Enhanced Photoluminescence and Controlled Plasmonic Interactions"

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restrictedcc-by-4.0Oct 2024View details →
zenodo4/100

Photoluminescence Mechanism of Carbon Dots: Triggering High-colour-purity Red Fluorescence Emission through Edge Amino Protonation

<p>Dataset</p>

restrictedOct 2021View details →

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International Brain Laboratory public data

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