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56 results for “epitaxy”
Single-layer graphene on epitaxial FeRh thin films_experimental dataset
<p>This file contains the raw unprocessed experimental data for the results published in Uhlíř et al., Single-layer graphene on epitaxial FeRh thin films, Applied Surface Science, Volume 514, June 2020, 145923. </p>
INFLUENCE OF THE RARE EARTH ELEMENT YB ON THE PHOTOLUMINOSCENCE PROPERTIES OF EPITAXIAL FILMS OF GAAS AND ALXGA1-XAS
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Data for "Dirac-fermion-assisted interfacial superconductivity in epitaxial topological-insulator/iron-chalcogenide heterostructures"
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Dataset for "Remote epitaxial crystalline perovskites for ultrahigh resolution micro-LED displays"
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Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch
<p>Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy and is modelled by combining planar and self-assembled nanowire growth mechanisms. Here we use GaAs SAE as a model system to provide a different perspective. First, we provide evidence of the significant impact of the annealing stage in the calculation of the growth rates. Then, by elucidating the effect of geometrical constraints on the growth of the semiconductor crystal, we demonstrate the role of adatom desorption and resorption beyond the direct-impingement and diffusion-limited regime. Our theoretical model explains the effect of these constraints on the growth, and in particular why the SAE growth rate is highly sensitive to the pattern geometry. Finally, the disagreement of the model at the largest pitch points to non-negligible multiple adatom recycling between patterned features. Overall, our findings point out the importance of considering adatom diffusion, adsorption and desorption dynamics in designing the SAE pattern to create predetermined nanoscale structures across a wafer. These results are fundamental for the SAE process to become viable in the semiconductor industry.</p>
Raw data of "Heterogeneous integration of superconducting thin films and epitaxial semiconductor heterostructures with Lithium Niobate"
<p>Raw data used to produce figures</p>
Data from: Epitaxial K0.5Na0.5NbO3 thin films by aqueous chemical solution deposition
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Growth - related formation mechanism of I3 - type basal stacking fault in epitaxially grown hexagonal Ge - 2H
<p>The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal(2H)Gephaseis a challenge that can be overcome by usingwurtziteGaAsnanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I3-type are formed in themetastable2H structure. The growth of such core/shell heterostructures has been observed in situ and in real-time by means of environmental transmission electron microscopy using chemical vapor deposition. The observations provide direct evidence of a step-flow growth of the Ge-2H epi layer and reveal the growth-related formation of I3-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these in situ observations we can propose a scenario for the nucleation of I3-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for the perfect crystalline synthesis of SiGe-2H.</p> <p>This dataset contains all the original scanning and transmission electron microscopy images and videos, and the atomic models that our results and understanding of the I3 defects are based on.</p>
APPLICATION OF DIELECTRIC AND CONDUCTIVE EPITAXIAL FILMS IN SILICON TECHNOLOGY
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PECULIARITIES OF EPITAXIAL DIFFUSION CoSi2 FILMS GROWN ON THE SURFACE OF FLUORITE
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Supporting Material for manuscript "Structure Prediction of Ionic Epitaxial Interfaces with Ogre Demonstrated for Colloidal Heterostructures of Lead Halide Perovskites"
<p>This database contains the Supporting Material for the ChemrXiv preprint entitled "Fast Prediction of Ionic Epitaxial Interfaces with Ogre Demonstrated for Colloidal Heterostructures of Lead Halide Perovskites", authored by Stefano Toso, Derek Dardzinski, Liberato Manna and Noa Marom. The database contains:</p> <p>· Ogre simulations for all the epitaxial interfaces discussed in the manuscript, provided as raw output.</p> <p>· Installation wizards for the OgreInterface application (available for Windows, Linux, and Mac).</p> <p>· Jupyter Notebook interface to run the Ogre library with more flexibility.</p> <p>· Jupyter Notebook interface to reproduce all simulations discussed in the manuscript.</p> <p>· Reference CIFs for all the materials discussed in the manuscript.</p> <p>· VESTA atomistic models of all the interfaces discussed in the manuscript (Main Text only).</p>
Datasets of Momeni Pakdehi et al, Adv. Funct. Mater. 2004695 (2020), "Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene"
<p>Compilation of the datasets used to generate the figures in the following journal paper:</p> <p>"Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene" by Davood Momeni Pakdehi et al, Adv. Funct. Mater. 2004695 (2020), DOI: 10.1002/adfm.202004695</p>
Datasets of Park et al.,Meas. Sci. Technol. 33 115019 (2022), "Glass encapsulation of molecular-doped epitaxial graphene for quantum resistance metrology"
<p>Compilation of the datasets used to generate the figures in the following journal publication:</p> <p>"Glass encapsulation of molecular-doped epitaxial graphene for quantum resistance metrology"</p> <p>by Jaesung Park, Kyung-Geun Lim and Dong-Hun Chae,</p> <p>Meas. Sci. Technol. 33 (2022) 115019,</p> <p>DOI: <a href="https://doi.org/10.1088/1361-6501/ac8222">10.1088/1361-6501/ac8222</a></p>
Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy
<p>The source data of the ariticle, "Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy", which is submitted to Journal of Materials Chemistry A.</p>
A comparative study of epitaxial InGaAsBi/InP structures using Rutherford Backscattering Spectrometry, X-ray diffraction and Photoluminescence techniques.
<p>In this work we used a combination of photoluminescence (PL), high resolution X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) techniques to investigate material quality and structural properties of MBE-grown InGaAsBi samples (with and without an InGaAs cap layer) with targeted bismuth composition in the 3-4% range. XRD data showed that the InGaAsBi layers are more homogenous in the uncapped samples. For the capped samples, the growth of the InGaAs capped layer at higher temperature affects the quality of the InGaAsBi layer and bismuth distribution in the growth direction. Low temperature PL exhibited multiple emission peaks; the peak energies, widths and relative intensities were used for comparative analysis of the data in line with the XRD and RBS results. RBS data at random orientation together with channelled measurements allowed both an estimation of the bismuth composition as well as analysis of the structural properties. The RBS channelling showed evidence of higher strain due to possible anti-site defects in the capped samples grown at a higher temperature. It is also suggested that the growth of the capped layer at high temperature causes deterioration of the bismuth-layer quality. The RBS analysis demonstrated evidence of a reduction of homogeneity of uncapped InGaAsBi layers with increasing bismuth concentration. The uncapped higher bismuth concentration sample showed less defined channelling dips suggesting poorer crystal quality and clustering of bismuth on the sample surface.</p>
Datasets of Chatterjee et al., ACS Appl. Electron. Mater. 4, 5317 (2022), "Impact of polymer-assisted epitaxial graphene growth on various types of SiC substrates"
<p>Compilation of the datasets used to generate the figures in the following journal publication:</p> <p>"Impact of polymer-assisted epitaxial graphene growth on various types of SiC substrates"</p> <p>by Atasi Chatterjee, Mattias Kruskopf, Stefan Wundrack, Peter Hinze, Klaus Pierz, Rainer Stosch, and Hansjoerg Scherer,</p> <p>ACS Appl. Electron. Mater. 4, 5317 (2022),</p> <p>DOI: 10.1021/acsaelm.2c00989.</p>
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Allen Brain Atlas
Allen Brain Atlas is an Allen Institute collection of brain map atlases, datasets, APIs, and analysis tools covering mouse, human, and non-human primate brain resources.
Annotated Behaviour and Observability Dataset (ABODe)
ABODe is a University of Edinburgh DataShare dataset for behavior classification in group-housed mice using home-cage video, identities, bounding boxes, ground-plate positions, and annotator labels.
DANDI Archive for NWB datasets
DANDI is a BRAIN Initiative archive for publishing and sharing neurophysiology data, including electrophysiology, optophysiology, and behavioral data packaged as NWB and related standards.
International Brain Laboratory public data
The International Brain Laboratory public data releases expose standardized mouse decision-making experiments, including Neuropixels recordings, widefield calcium imaging, behavior, and session metadata accessed through the ONE API.
OpenNeuro
OpenNeuro is a free, open platform for sharing neuroimaging datasets, with public search, dataset pages, and download paths for web, S3, DataLad, and the OpenNeuro CLI.