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647 results for “Silicon”
Silicon Single Crystal Diffraction Pattern
<p>Single crystal silicon pattern, as used in AstroEBSD (https://arxiv.org/abs/1804.02602).</p> <p>The pattern can be indexed with a pattern centre of [0.5, 0.18, 0.62] (PCx, PCy, PCz - using AstroEBSD conventions) and it will return Euler angles of (-47.7, 73.9, -71.9) in degrees with a ZXZ convention. This is shown in figure 9 of the AstoEBSD paper.</p>
Raw data for 'Low-loss high-Q silicon-rich silicon nitride microresonators for Kerr nonlinear optics'
<p>It's the raw data for the paper 'Low-loss high-Q silicon-rich silicon nitride microresonators for Kerr nonlinear optics'</p>
EBSD Kikuchi Pattern Analysis, Silicon 15kV
<p>Supplementary Data and Images for Si EBSD pattern analysis as presented in</p> <p>A. Winkelmann, T.B. Britton, G. Nolze "Constraints on the effective electron energy spectrum in backscatter Kikuchi diffraction", Physical Review B (2019)</p>
Data for Nguyen Le et al. "Giant non-linear susceptibility of hydrogenic donors in silicon and germanium."
<p>Data and codes for the computation in Nguyen Le et al. "Giant non-linear susceptibility of hydrogenic donors in silicon and germanium."</p>
Undeformed silicon EBSD dataset
<p>Data from Electron Backscatter Diffraction analysis for two small silicon maps captured using a Bruker eFlash HR (1st generation) with full pattern resolution on a FEI Quanta instrument. The orientation data can be loaded using MTEX 5.0.3 (<a href="http://mtex-toolbox.github.io/">http://mtex-toolbox.github.io/</a>). The data is released to facilitate the development of new EBSD analysis methodologies, including AstroEBSD (<a href="https://github.com/benjaminbritton/AstroEBSD/">https://github.com/benjaminbritton/AstroEBSD/</a>) which has been developed by the Experimental Micromechanics Research Group (<a href="http://www.expmicromech.com/">http://www.expmicromech.com</a>) & the Oxford Micromechanics group (<a href="http://users.ox.ac.uk/~ajw/">http://users.ox.ac.uk/~ajw/</a>). The data is from a single crystal of semiconductor grade silicon. The wafer is oriented with (001) as the surface plane and <110> approximately aligned along x and y. The x axis points right to left, the y axis points top to bottom, and the z axis is out of the page (as per conventions described in <a href="http://dx.doi.org/10.1016/j.matchar.2016.04.008">http://dx.doi.org/10.1016/j.matchar.2016.04.008</a>). </p> <p>This data was collected within the Harvey Flower EM Suite within the Department of Materials, Imperial College London. The equipment was funded under the Shell-Imperial Advanced Interfaces in Materials Science University Technology Center.</p> <p>Please contact Dr Ben Britton or Alex Foden if you have any queries or require further information (b.britton@imperial.ac.uk, a.foden16@imperial.ac.uk).</p>
Development of a High-Energy-Density Lithiated Silicon-Sulfur Full Cell with Enhanced Stability and Longevity
<p>The raw materials for the draft: "Development of a High-Energy-Density Lithiated Silicon-Sulfur Full Cell with Enhanced Stability and Longevity"</p>
Dataset for published paper: Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation
<p>This dataset contains the measurement results described in the paper 'Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation'.</p>
Siliceous and non-nutritious: nitrogen limitation increases anti-herbivore silicon defenses in a model grass
<p>Silicon (Si) accumulation alleviates a diverse array of environmental stresses in many plants, including conferring physical resistance against insect herbivores. It has been hypothesised that grasses, in particular, utilise 'low metabolic cost' Si for structural and defensive roles under nutrient limitation. While carbon (C) concentrations often negatively correlate with Si concentrations, the relationship between nitrogen (N) status and Si is more variable. Moreover, the impacts of N limitation on constitutive physical Si defences (e.g. silica and prickle cells) against herbivores are unknown. We determined how N limitation affected Si deposition in the model grass <i>Brachypodium distachyon</i> and how changes in these constitutive defences impacted insect herbivore (<i>Helicoverpa armigera</i>) growth rates. We used scanning electron microscopy (SEM) and energy dispersive X-ray spectrometry in conjunction with X-ray mapping (XRM) to quantify physical structures on leaves and determine Si deposition patterns. We also determined how N limitation and Si supply impacted the jasmonic acid (JA) pathway, the master-regulator of induced defences against arthropod herbivores. N limitation reduced shoot growth by over 40%, but increased root mass (+21%), leaf Si concentrations (+50%) and the density of silica (+28%) and flattened prickle (+76%) cells. EDS and XRM established that Si was being deposited in these structures, together with hooked prickle cells and macro-hairs. Herbivore relative growth rates (RGR) were more than 115% lower in Si supplied plants compared to plants without Si supply and negatively correlated with leaf Si concentration and silica cell density. RGR was further reduced by N limitation and positively correlated with leaf N concentrations. Increases in JA concentrations following induction of the JA pathway were at least doubled by N limitation. Si accumulation and deposition were highly regulated by N availability, with N limitation promoting both constitutive Si physical defences and induction of the JA defensive pathway, in line with the resource availability hypothesis. These results indicate that grasses use 'low cost Si' when resources are limited and suggests that plant productivity may benefit from optimising conventional fertilisers and Si fertilisation.</p>
Dataset related to the publication "Thermal properties of nanocrystalline silicon nanobeams", DOI: 10.1002/adfm.202105767
<p>This folder contains the raw data from which the graphs in paper "Thermal properties of nanocrystalline silicon nanobeams", DOI: 10.1002/adfm.202105767, have been obtained.</p>
Supporting data for 'Fast universal quantum gate above the fault-tolerance threshold in silicon'
<p>Data supporting for paper 'Fast universal quantum gate above the fault-tolerance threshold in silicon'.</p> <p>All the data are stored in the HDF5 format that can be conveniently loaded by the xarray Python package.</p>
Dataset: Powering Earth's ancient dynamo with silicon 2 precipitation
<p>Collated experimental dataset used in this study. Study, temperature, pressure and normalised molar concentrations of Fe, Si, O, C, S, Mg, FeO, SiO2 and MgO in metal and silicate from partitioning experiments.</p>
Dataset for the paper "Boosting Charge Carrier Mobilities in Upgraded Metallurgical Grade Silicon by Phosphorous Diffusion Gettering"
<p>Dataset related to the publication "Boosting Charge Carrier Mobilities in Upgraded Metallurgical Grade Silicon by Phosphorous Diffusion Gettering" in Advanced Energy and Sustainable Research 2022, 2200077 (https://doi.org/10.1002/aesr.202200077)</p>
Electron backscatter diffraction patterns from a single crystal silicon wafer
<p>An electron backscatter diffraction (EBSD) dataset of (50, 50) patterns of (480, 480) pixel resolution from a single crystal silicon wafer. The patterns were acquired on a NORDIF UF-1100 detector in a Zeiss Supra 55 VP FEG SEM operated at 20 kV. The working distance was 16.1 mm and the nominal sample tilt was 70<span class="math-tex">\(^{\circ}\)</span>. The nominal step size is 40 μm, so the scan covers a nominal area of (2 x 2) μm<sup>2</sup>.</p> <p>The patterns are stored in NORDIF's binary file format (Pattern.dat) with the top-left pixel in the top-left pattern as the first byte, and the bottom-right pixel in the bottom-right pattern as the last byte. The patterns can be opened in for example the open-source Python package kikuchipy (https://github.com/pyxem/kikuchipy) with the following commands:</p> <pre><code class="language-python">import kikuchipy as kp s = kp.load("Pattern.dat")</code></pre>
Data and simulation files for: "Silicon anisotropy in a bi-dimensional optomechanical cavity"
<p>Data and simulation files for: "Silicon anisotropy in a bi-dimensional optomechanical cavity"</p>
Elevated atmospheric CO2 suppresses silicon accumulation and exacerbates endophyte reductions in plant phosphorus
<p>Many temperate grasses are both hyper-accumulators of silicon (Si) and hosts of <em>Epichloë</em> fungal endophytes; functional traits which may alleviate environmental stresses such as herbivore attack. Si accumulation and endophyte infection may operate synergistically, but this has not been tested in a field setting, nor in the context of changing environmental conditions. Predicted increases in atmospheric CO<sub>2</sub> concentrations can affect both Si accumulation and endophyte function, but these have not been studied in combination.</p> <p>We investigated how elevated atmospheric CO<sub>2</sub> (eCO<sub>2</sub>), Si supplementation, endophyte-presence and insect herbivory impacted plant growth, stoichiometry (C, N, P and Si), leaf gas exchange (rates of photosynthesis, stomatal conductance, transpiration rates) and endophyte production of anti-herbivore defences (alkaloids) of an important pasture grass (tall fescue; <em>Lolium arundinaceum</em>) in the field.</p> <p>eCO<sub>2</sub> and Si supplementation increased shoot biomass (+52% and +31%, respectively), whereas herbivory reduced shoot biomass by at least 35% and induced Si accumulation by 24%. Shoot Si concentrations, in contrast, decreased by 17–21% under eCO<sub>2</sub>. Si supplementation and herbivory reduced shoot C concentrations. eCO<sub>2</sub> reduced shoot N concentrations which led to increased shoot C:N ratios. Overall, shoot P concentrations were 26% lower in endophytic plants compared to non-endophytic plants, potentially due to decreased mass flow (i.e. observed reductions in stomatal conductance and transpiration). Alkaloid production was not discernibly affected by any experimental treatment. The negative impacts of endophytes on P uptake were particularly strong under eCO<sub>2</sub>.</p> <p>We show that eCO<sub>2</sub> and insect herbivory reduce and promote Si accumulation, respectively, incorporating some field conditions for the first time. This indicates that these drivers operate in a more realistic ecological context than previously demonstrated. Reduced uptake of P in endophytic plants may adversely affect plant productivity in the future, particularly if increased demand for P due to improved plant growth under eCO<sub>2</sub> cannot be met.</p>
Data from: Silicon supplementation and jasmonate activation synergistically increase phenolic defences against a legume herbivore
<p>The accumulation of silicon (Si) is widely reported to have anti-herbivore defensive properties in grasses. There is emerging, but fragmentary, evidence that Si could play a similar role in legumes. Here, we sought to understand the effects of Si supplementation on anti-herbivore defensive properties in lucerne (<em>Medicago sativa</em>), especially in relation to other potential defences (i.e. phenolics) and the phytohormone that regulates anti-herbivore defences, jasmonic acid or jasmonate (JA), which is also linked to Si accumulation. We determined how growth, root nodulation and chemistry (carbon, nitrogen and phenolic concentrations) of four genotypes of lucerne responded to Si supplementation, with and without the application of JA, and we used feeding assays to determine the subsequent effects on the feeding success of adult Sitona discoideus weevils. Si supplementation increased plant mass and root nodulation of <em>M. sativa</em> by 61% and 227%, respectively, and reduced relative consumption (RC) and frass production by S. discoideus by 38% and 30%, respectively. Si supplementation had no effect on foliar nitrogen concentrations, most likely due to the dilution effects of increased plant growth and foliar carbon. Phenolic concentrations were negatively correlated with leaf RC; RC also decreased by 34% when JA was applied to plants. When Si was combined with JA application, phenolics were significantly enhanced, demonstrating the potential to stimulate multiple anti-herbivore properties in M. sativa. The novel findings suggest that Si accumulation may play a more important role in legume resistance to herbivorous animals than previously thought. The ubiquity of soil Si and its emerging functional role in plant biology, including plant–animal interactions, suggest that these patterns could be common amongst legumes.</p>
Data: Multilayer integration in silicon nitride: decoupling linear and nonlinear functionalities for ultralow loss photonic integrated systems
<p>This folder contains the data relative to the paper with title:<br> Multilayer integration in silicon nitride: decoupling linear and nonlinear functionalities for ultralow loss photonic integrated systems<br> by<br> Marcello Girardi, Óskar Helgason, Alexander Caut, Magnus Karlsson, Anders Larsson, Victor Torres Company</p> <p>Chalmers University of Technology</p>
Silicon and Epichloë-endophyte defences in a model temperate grass diminish feeding efficiency and immunity of an insect folivore
<p>Plants deploy diverse anti-herbivore defences which reduce feeding and performance of herbivores. Temperate grasses use silicon (Si) accumulation and<em> Epichloë</em>-endophytes for physical and chemical (i.e. endophytic-alkaloids) defence against insect herbivores. Recent studies suggest that <em>Epichloë</em>-endophytes increase Si accumulation in their host grass. It is unknown, however, how this affects Si-deposition on the leaf surface, their impacts on insect herbivore feeding efficiency and their immunity to potential infection/parasitism.</p> <p>To address this knowledge gap, we grew tall fescue (<em>Festuca arundinacea</em>) hydroponically with and without Si, in the absence or presence of the novel AR584 <em>Epichloë</em>-strain. We exposed plants to <em>Helicoverpa armigera</em> (Lepidoptera: Noctuidae) in both in-situ (intact leaves) and ex-situ (excised leaves) feeding trials and determined the effects of Si and endophyte defences on herbivore feeding efficiency, growth rates and immunity against potential infection/parasitism.</p> <p>Endophytic plants supplied with Si showed 110% and 143% increases in leaf silica density and leaf Si concentrations, respectively, when exposed to herbivory, compared to non-endophytic plants that were herbivore-free. Despite the endophyte-mediated increases in Si concentrations, <em>H. armigera</em> was only affected by Si supply; growth rates decreased by 87% and most feeding efficiency indices decreased by at least 30%. Si supply also increased mandibular wear by 16%, which was negatively correlated with <em>H. armigera</em> growth rates. Cellular and humoral immunity of <em>H. armigera</em> were negatively affected by both Si and endophytes. Endophytic-loline alkaloid concentrations were unaffected by Si supply or herbivory, whereas herbivory increased peramine concentrations by 290%. </p> <p>To our knowledge, this is the first report of Si defences and <em>Epichloë</em>-endophyte-derived alkaloids compromising insect immunity <em>via</em> reduced melanisation response. Using tall fescue and <em>H. armigera</em>, our study suggests that deploying both physical (i.e. Si accumulation) and chemical (i.e. endophytic-alkaloids) defences acting against multiple insect herbivore traits, including feeding efficiency, growth and immunity, may be a successful defence strategy in temperate grasses. This multi-faceted defence may be particularly difficult for insect herbivores to overcome.</p>
Silicon-based anti-herbivore defense in tropical tree seedlings
<p>Silicon-based defenses effectively deter insect herbivores in many cultivated and wild grass species. Furthermore, in some of these species, silicon (Si) uptake and defense can be induced by herbivory. Tropical trees also take up Si and leaf Si concentrations vary greatly across and within species. As herbivory is a major driver of seedling mortality and niche differentiation of tropical tree species, understanding anti-herbivore defenses is pivotal. Yet, whether silicon is a constitutive and inducible herbivory defense in tropical forest tree species remains unknown.</p> <p>We grew seedlings of eight tropical tree species in a full factorial experiment, including two levels of plant-available soil Si concentrations (-Si/+Si) and a simulated herbivory treatment (-H/+H). The simulated herbivory treatment was a combination of clipping and application of methyl jasmonate. We then carried out multiple-choice feeding trials, separately for each tree species, in which leaves of each treatment combination were offered to a generalist caterpillar (<em>Spodoptera frugiperda</em>). Leaf damage was assessed.</p> <p>Three species showed a significant decrease in leaf damage under high compared to low Si conditions (by up to 72%), consistent with our expectation of Si-based defenses acting in tropical tree species. In one species, leaf damage was increased by increasing soil Si and in the remaining four species, no effect of soil Si on leaf damage was observed. Opposite to our expectation of Si uptake and defense being inducible by herbivory damage, simulated herbivory increased leaf damage in two species. Furthermore, simulated herbivory reduced Si concentrations in one species.</p> <p>Our results showed that tropical tree seedlings can be better defended when growing in Si-rich compared to Si-poor soils, and that the effects of Si on plant defense vary strongly across species. Furthermore, Si-based defenses may not be inducible in tropical tree species. Overall, constitutive Si-based defense should be considered part of the vast array of anti-herbivore defenses of tropical tree species. Our finding that Si-based defenses are highly species-specific combined with the fact that herbivory is a major driver of mortality in tropical tree seedling, suggests that variation in soil Si concentrations may have pervasive consequences for regeneration and performance across tropical tree species.</p>
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing
<p>Dataset for the paper </p><h2><strong>Study of W centers formation in silicon upon ion implantation and rapid thermal annealing</strong></h2><p><strong>doi: </strong>https://doi.org/10.1109/SUM57928.2023.10224442</p>
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OpenNeuro
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