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3 results for “GeSn”
Raw data set: One-Step Fabrication of GeSn Branched Nanowires
<p>This is the raw data set for the publication titled " One-Step Fabrication of GeSn Branched Nanowires" in the journal Chemistry of Materials (<em>Chem. Mater.</em>201931114016-4024). Below is the abstract of the publicaiton.</p> <p>Abstract: We report for the first time the self-catalysed, single step growth of branched GeSn nanostructures by a catalytic vapour-liquid-solid (VLS) mechanism. These typical GeSn nanostructures consist of <111> oriented Sn rich (~8 at. %) GeSn “branches” grown epitaxially on GeSn “trunks”, with a Sn content of ~ 4 at. %. The trunks are seeded from Au<sub>0.80</sub>Ag<sub>0.20</sub> nanoparticles followed by the catalytic growth of secondary branches (diameter ~ 50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high resolution electron microscopy and energy dispersive X-ray (EDX) analysis. The nanowires, with <111> directed GeSn branches oriented at ~ 70 ° to the trunks, have no apparent defects or change in crystal structure at the trunk-branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. Electrochemical performance of these highly ordered GeSn nanostructures were explored as a potential anode material for Li-ion batteries, due to their high surface to volume ratio and increased charge carrier pathways. The unique structure of branched nanowires led to high specific capacities comparable to, or greater than, conventional Ge nanowire anode materials and Ge<sub>1-<em>x</em>­</sub>Sn<em><sub>x</sub></em><sub>­</sub> nanocrystals.We report for the first time the self-catalysed, single step growth of branched GeSn nanostructures by a catalytic vapour-liquid-solid (VLS) mechanism. These typical GeSn nanostructures consist of <111> oriented Sn rich (~8 at. %) GeSn “branches” grown epitaxially on GeSn “trunks”, with a Sn content of ~ 4 at. %. The trunks are seeded from Au<sub>0.80</sub>Ag<sub>0.20</sub> nanoparticles followed by the catalytic growth of secondary branches (diameter ~ 50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high resolution electron microscopy and energy dispersive X-ray (EDX) analysis. The nanowires, with <111> directed GeSn branches oriented at ~ 70 ° to the trunks, have no apparent defects or change in crystal structure at the trunk-branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. Electrochemical performance of these highly ordered GeSn nanostructures were explored as a potential anode material for Li-ion batteries, due to their high surface to volume ratio and increased charge carrier pathways. The unique structure of branched nanowires led to high specific capacities comparable to, or greater than, conventional Ge nanowire anode materials and Ge<sub>1-<em>x</em>­</sub>Sn<em><sub>x</sub></em><sub>­</sub> nanocrystals.</p>
MBE Growth of GeSn devices with intrinsic disorder
<p>These files consist of experimental data on GeSn devices. There are MATLAB files that were used to plot and analyse data.</p>
Challenges for room temperature operation of electrically pumped GeSn lasers
<p><strong>This data is accessible for bona-fide users upon request to the point of contact. </strong></p> <p>Data for the paper with the following abstract:</p> <div> <p>Recent demonstrations of room‐temperature lasing in optically pumped GeSn show promise for future CMOS compatible lasers for Si‐photonics applications. However, challenges remain for electrically pumped devices. Investigation of the processes that limit device performance is therefore vital in aiding the production of future commercial devices. In this work, a combined experimental and modelling approach is utilised to explore the dominant loss processes in current devices. By manipulating the band structure of functioning devices using high hydrostatic pressure techniques at low temperature, the dominant carrier recombination pathways are identified. This reveals that 93±5% of the threshold current is attributable to defect‐related recombination at a temperature,</p> <p>T = 85 K. Furthermore, carrier occupation of L‐valley states (carrier leakage) is responsible for 1.1± 0.3% of the threshold current, but this sharply increases to 50% with a decrease of just 30 meV in the L‐Ŵ separation energy. This indicates that thermal broadening of a similar order may reproduce these adverse effects, limiting device performance at higher temperatures. Temperature dependent calculations show that carrier occupation of indirect valley L‐states strongly affects the transparency carrier density and is therefore very sensitive to the Sn composition, leading to an effective operational temperature range for given Sn compositions and strain values. Recommendations for future device designs are proposed based on band structure and growth optimisations.</p> <p>Paper at: https://doi.org/10.1038/s41598-024-60686-3 </p> </div>
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