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56 results for “epitaxy”
Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices
<p>This dataset corresponds to the following manuscript: </p> <p>Zendrini, M., Dubrovskii, V., Rudra, A., Dede, D., Fontcuberta i Morral, A., Piazza, V. “Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices” <em>ACS Applied Nano Materials 7,16 (2024):</em> 19065–19074</p> <p>DOI: <a href="http://doi.org/10.1021/acsanm.4c02765">doi.org/10.1021/acsanm.4c02765</a></p> <p>The dataset contains raw SEM images in .tif format for all the arrays of nanowires and nanomembranes discussed in the paper. The dataset also contains the AFM scans in .xyz format for all the arrays of nanowires and nanomembranes. The data for the morphological analysis are extracted from the SEM images and the AFM scans and they are collected in two separate .txt files for NWs and NMs.</p>
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111) (data)
<p>This dataset contains the raw data files connected with the figures included in the paper "<em>Large-Area MOVPE Growth of Topological Insulator Bi<sub>2</sub>Te<sub>3</sub> Epitaxial Layers on i-Si(111)</em>" by <a href="https://pubs.acs.org/doi/10.1021/acs.cgd.1c00328">A. Kumar et al., <em>Cryst. Growth Des.</em> 2021, 21, 7, 4023–4029</a> </p>
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon (data)
<p>This dataset contains the raw data files connected with the figures included in the paper "<em>Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator Chemically Grown on Silicon</em>" by <a href="https://doi.org/10.1002/adfm.202109361">E. Longo et al., <em>Adv. Funct. Mater.</em> 2021, 2109361</a></p>
Dataset of the publication "Halide Perovskites as Disposable Epitaxial Templates for the Phase-Selective Synthesis of Lead Sulfochloride Nanocrystals"
<p>This dataset provides the raw data associated with the publication "Halide Perovskites as Disposable Epitaxial Templates for the Phase-Selective Synthesis of Lead Sulfochloride Nanocrystals".It contains:</p> <ul> <li>A readme file meant to help the user navigate the database</li> <li>The raw data associated with all the plots and charts found in the Main Text and in the Supplementary information.</li> <li>The raw data collected during the 3D electron diffraction experiments on Pb<sub>3</sub>S<sub>2</sub>Cl<sub>2</sub> Nanocrystals. </li> <li>The CIF files of all the crystal structures refined in the work</li> <li>An atomistic model of the Pb<sub>4</sub>S<sub>3</sub>Cl<sub>2</sub>/CsPbCl<sub>3</sub> interface, which can be visualized with the freeware software Vesta. </li> </ul>
Topological surface states in epitaxial (SnBi2Te4 )n (Bi2Te3)m natural van der Waals superlattices (data)
<p>This dataset contains the raw data files connected to the figures included in the paper "T<em>opological surface states in epitaxial (SnBi<sub>2</sub>Te<sub>4</sub> )<sub>n</sub> (Bi<sub>2</sub>Te<sub>3</sub>)<sub>m</sub> natural van der Waals superlattices</em>" by S. Fragkos et al., Phys. Rev. Materials <strong>5</strong>, 014203 (2021) <a href="https://doi.org/10.1103/PhysRevMaterials.5.014203">https://doi.org/10.1103/PhysRevMaterials.5.014203</a></p> <p>An Open Access version of the paper can be found here: <a href="https://zenodo.org/record/4562057#.YaDC4NBBxPY">https://zenodo.org/record/4563899#.YaDQ5NBBxPY</a></p>
Epitaxial HfTe2 Dirac semimetal in the 2D limit (data)
<p>This dataset contains the raw data files connected to the figures included in the paper "<em>Epitaxial HfTe<sub>2</sub> Dirac semimetal in the 2D limit</em>" by P. Tsipas et al., APL Materials <strong>9</strong>, 101103 (2021); <a href="https://doi.org/10.1063/5.0065839">https://doi.org/10.1063/5.0065839</a></p> <p>An Open Access version of the paper can be found here: <a href="https://doi.org/10.1063/5.0065839">https://doi.org/10.1063/5.0065839</a></p>
Ultrathin epitaxial Bi film growth on 2D HfTe2 template (data)
<p>This dataset contains the raw data files connected to the figures included in the paper "<em>Ultrathin epitaxial Bi film growth on 2D HfTe<sub>2</sub> template</em>" by E. Xenogiannopoulou et al., 2022 <em>Nanotechnology</em> <strong>33</strong> 015701; <a href="https://doi.org/10.1063/5.0038799">https://doi.org/10.1088/1361-6528/ac2d08</a></p> <p>An Open Access version of the paper can be found here: <a href="https://zenodo.org/record/4562057#.YaDC4NBBxPY">https://zenodo.org/record/5720132#.YaDKWNBBxPb</a></p>
Supplementary Information and Data for "Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots"
<p>Raw and processed TEM and AFM data for the article <strong><em>Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots</em></strong>.</p> <p>Paper: <a href="https://doi.org/10.1021/acs.nanolett.4c02182" target="_blank" rel="noopener">https://doi.org/10.1021/acs.nanolett.4c02182</a></p> <p>Preprint: <a href="https://arxiv.org/abs/2405.16073" target="_blank" rel="noopener">https://arxiv.org/abs/2405.16073</a></p> <p>The TEM data has a PDF information file included with description of the file types and how to open them.</p> <p>The AFM Nanosurf .nid files can be opened, e.g., with <a href="http://gwyddion.net/" target="_blank" rel="noopener">Gwyddion</a>.</p>
Two-dimensional Xene Heterostructures by Epitaxy
<p>The synthesis of new Xenes and their potential applications prototypes have achieved significant milestones so far. However, to date the realization of Xene heterostructures in analogy with the well-known van der Waals heterostructures remains an unresolved issue. Here, we introduce a Xene heterostructure concept based on the epitaxial combination of silicene and stanene on Ag(111), and demonstrate how one Xene layer enables another Xene layer of different nature to grow on top. We synthesized single-phase (4 x 4) silicene using stanene as a template, and managed to grow stanene on top of silicene on the other way around. In both heterostructures <em>in situ</em> and <em>ex situ</em> probes confirm layer-by-layer growth without intercalations and intermixing. Modelling via Density Functional Theory (DFT) shows that the atomic layers in the heterostructures are strongly interacting and hexagonal symmetry conservation in each individual layer is sequence-selective. Our results provide a substantial step towards currently missing Xene heterostructures and open the door to a new frontier of atomic-scale materials engineering. </p>
Twisted epitaxy of gold nanodiscs grown between twisted substrate layers of molybdenum disulfide
<p>We expand the concept of epitaxy to a regime of "twisted epitaxy" with the epilayer crystal orientation between two substrates influenced by their relative orientation. We annealed nanometer-thick gold (Au) nanoparticles between two substrates of exfoliated hexagonal molybdenum disulfide (MoS<sub>2</sub>) with varying orientation of their basal planes with a mutual twist angle from 0° to 60°. Transmission electron microscopy studies show that the Au alignment is midway between that of the top and bottom MoS<sub>2</sub> when the twist angle of the bilayer is small (< ~7°). For larger twist angles, Au has only a small misorientation with the bottom MoS<sub>2</sub> that varies approximately sinusoidally with the twist angle of the bilayer MoS<sub>2</sub>. Four-dimensional scanning transmission electron microscopy analysis further reveals a periodic strain variation (< |±0.5%|) in the Au nanodiscs associated with the twisted epitaxy, consistent with the Moiré registry of the two MoS<sub>2</sub> twisted layers.</p>
Dataset for Main Text and SI - Squeezing the threshold of metal-halide perovskite micro-crystal lasers grown by solution epitaxy by Shuyu Zhou et al.
<p>All data published in </p> <p><strong><span>Squeezing the threshold of metal-halide perovskite micro-crystal lasers grown by solution epitaxy</span></strong></p> <p><strong><span> by </span></strong><em><span>Shuyu Zhou, Viktor Rehm, Hany A. Afify, Yufei Han, Jędrzej Korczak, Andrzej Szczerbakow, Tomasz Story, Zijian Peng, Albert These, Anastasia Barabash, Andres Osvet, Christoph J. Brabec, Klaus Götz, Tobias Unruh, Felix Hilpert, Olaf Brummel, Jörg Libuda, Wolfgang Heiss</span></em></p> <p><em><span>are summarized in this rar file. </span></em></p>
Growth-related formation mechanism of I3-type basal stacking fault in epitaxially grown hexagonal Ge-2H
<p>The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional opto-electronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal (2H) Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I<sub>3</sub>-type are formed in the metastable 2H structure. The growth of such core/shell heterostructures is observed <em>in situ</em> and in real-time by means of environmental transmission electron microscopy using chemical vapour deposition. The observations provide direct evidence of a step-flow growth of Ge-2H epilayers and reveal the growth-related formation of I<sub>3</sub>-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these <em>in situ</em> observations, we can propose a scenario for the nucleation of I<sub>3</sub>-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for perfect crystalline synthesis of SiGe-2H.</p> <p>This data set contains all the processed supporting videos of in-situ TEM observations .</p> <p> </p>
Data set for "Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition "
<p>Data set for the paper "Superconducting 2D NbS<sub>2</sub> Grown Epitaxially by Chemical Vapor Deposition"</p>
Structural Defects Improve the Memristive Characteristics of Epitaxial La0.8Sr0.2MnO3-based Devices
<p>Data files (.txt) of the data presented in the publication <a href="https://doi.org/10.1002/admi.202200498">10.1002/admi.202200498</a></p> <p>File names are referred to as the reference of the Figure and number in the main manuscript, followed by the sample (LSM/STO or LSM/LAO) and keywords of the figure.</p> <p>Each file corresponds only to the data of one sample.</p> <p>Regarding the series in a Figure, in the case there is very little data, the series are in a single file, arranged in columns. Otherwise, the series with large amounts of data have been split into single files named according to the series (legend).</p> <p>All the files include two headers (Name and Units) for each column. The files containing data from multiple series contain an extra header to precise the data series.</p>
Dataset for "Superior thermoelectric performance of SiGe NWs epitaxially integrated into thermal micro-harvesters"
<p>This is the dataset for the work "Superior thermoelectric performance of SiGe NWs epitaxially integrated into thermal micro-harvesters"</p> <p>The files include:</p> <p>· INDIVIDUAL NW data:</p> <p> - I-V data of each NW at different temperatures<br> - SEM images of the NW, each of them used for assessing one NW parameter<br> - Tip: NW diameter 2<br> - Base: NW diameter 1<br> - Overall: NW length<br> - Tilted view at 45º: Relative NW heigh over the substrate</p> <p>· SEEBECK MEASUREMENT data:</p> <p> - Voc versus applied dT data for each substrate temperature<br> - File containing calibration data for all resistors</p> <p>· POWER HARVESTED data:</p> <p> - I-V curves of each microthermocouple connection X-Y upon different substrate temperatures in tabulated separated .txt files<br> - Summary of Individual microthermocouple results (Results_Individual) in tabulated separated .txt files<br> - Summary of Combination of several microthermocouples in series (Results_Combinations) in tabulated separated .txt files</p>
Epitaxial La0.5Sr0.5MnO3 bipolar memristive devices with tunable and stable multilevel states
<p>Data files (.txt) of the data presented in the publication DOI 10.1002/admi.202202496</p> <p>File names are referred to as the reference of the Figure and number in the main manuscript and keywords of the figure.</p> <p>Regarding the series in a Figure, in the case there is very little data, the series are in a single file, arranged in columns. Otherwise, the series with large amounts of data have been split into single files named according to the series (legend).</p> <p>All the files include two headers (Name and Units) for each column. The files containing data from multiple series contain an extra header to precise the data series.</p>
Twisted epitaxy of gold nanodiscs grown between twisted substrate layers of molybdenum disulfide
Open the record for dataset details and reuse information.
Data from "Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions"
<p><strong>Full Changelog</strong>: https://github.com/ShabaniLab/arXiv-2303.01902/commits/v1.0.0</p>
Data on Epitaxial growth of large scale α phase antimonene
<ol> <li>ARPES: electronic structure of α phase antimonene measured with angle-resolved photoemission spectroscopy.</li> <li>DFT: a) sb_alpha_bs_GGA.tar.gz - contains input VASP files (POSCAR, POTCAR, INCAR, KPOINTS) and output (PROCAR) for band structure calculations within GGA-PBE approximation. <br>b) sb_alpha_bs_HSE06.tar.gz - contains input VASP files (POSCAR, POTCAR, INCAR, KPOINTS) and output (PROCAR) for band structure calculations within HSE06 approximation. </li> <li>LEEM: a) LEED pattern of α phase antimonene grown on w-Sb/W(110) surface. E=40 eV. <br>b) movies presenting growth of the α phase antimonene on the w-Sb/W(110) substrate: <br>Movie 1A: Field of View (FoV) = 10 μm, T = 390 K, E = 3.5 eV.<br>Movie 1B: Field of View (FoV) = 10 μm, T = 350 K (0 – 0.1 ML) plus T = 430 K (0.1 – 1.0). E = 3.5 eV.<br>Movie 2: FoV = 50 μm, T = 390 K, E = 3.5 eV.<br>Movie 3: FoV = 10 μm, T = 410 K, E = 3.5 eV.<br>Movie 4: FoV = 50 μm, T = 330 K, E = 3.5 eV.<br>Movie 5: FoV = 5 μm, T = 400 K, E = 24 eV. The movie has been recorded using a tilted electron beam enabling the observation of antimonene domains. <br>c) LEEM images recorded with a tilted electron beam. <em><span>E</span></em><span> = 22 eV, FOV=5 μm. </span></li> <li><span>STM: STM images of α phase antimonene grown on w-Sb/W(110). </span></li> </ol> <p> </p> <p> </p>
Figure data of 'Epitaxy of advanced nanowire quantum devices'
<p>Data belonging to 'Epitaxy of advanced nanowire quantum devices' including metadata files are in this ZIP folder</p>
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