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ShareScore release 0.9.0
Dataset results
8 results for “stacking fault”
Growth-related formation mechanism of I3-type basal stacking fault in epitaxially grown hexagonal Ge-2H
<p>The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional opto-electronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal (2H) Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I<sub>3</sub>-type are formed in the metastable 2H structure. The growth of such core/shell heterostructures is observed <em>in situ</em> and in real-time by means of environmental transmission electron microscopy using chemical vapour deposition. The observations provide direct evidence of a step-flow growth of Ge-2H epilayers and reveal the growth-related formation of I<sub>3</sub>-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these <em>in situ</em> observations, we can propose a scenario for the nucleation of I<sub>3</sub>-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for perfect crystalline synthesis of SiGe-2H.</p> <p>This data set contains all the processed supporting videos of in-situ TEM observations .</p> <p> </p>
Supporting dataset -A for "Crystallization of FAPbI3: polytypes and stacking faults"
<p>This dataset contains</p> <ol> <li>XYZ trajectories of 2H-polytype-3R phase phase transition for 1296 atoms and 1728 atom suspercell of FAPbI3</li> <li>Predicted polytypes and their mixtures from MD simulations, for example 12H polytype of FAPbI3</li> </ol>
Nontrivial gapless states at the stacking faults of weak topological insulators
<p>This code is used to study the topological properties of weak topological insulators in the presence of a stacking fault. Each WTI is made by a stack of zigzag ribbons stacked on top of each other in the z direction. There are two types of WTIs taken into consideration. One has a topological ribbon and a insulating spacer in each unit cell (two layers per unit cell). The other one has one topological layer and two spacers in each unit cell (three layers per unit cell).</p>
Experimental data used in the article entitled "Engineering an ultra-fine grained microstructure, twins and stacking faults in PBF-LB/M Al-Si alloy via KoBo extrusion method"
<p>Dataset include</p> <p>EBSD results: KOB;O.ang and LPBF_condition.ang</p> <p>Tensile test results:</p> <p>KOBO-processed sample: KOBO.xls</p> <p>LPBF sample: SLM.xls</p>
Dataset for the article entitled: "Revealing the strengthening contribution of stacking faults, dislocations and grain boundaries in severely deformed LPBF AlSi10Mg alloy"
<p>Dataset includes:</p> <p>EBSD data:</p> <p>AlSi10Mg_HT320.ang - Heat treated sample</p> <p>HT320E100.ang - Heat treated ECAP processed sample</p> <p>TKD data:</p> <p>HT320E100.ang - Heat treated ECAP processed sample</p> <p>XRD data:</p> <p>AlSi10Mg_HT320.ASC - Heat treated sample</p> <p>AlSi10Mg_HT320_ECAP100.ASC - Heat treated ECAP processed sample</p>
Supporting dataset -C for "Crystallization of FAPbI3: polytypes and stacking faults"
<p>XYZ trajectory files of (111)-3R seeded growth of FAPbI3</p>
Supporting dataset -B for "Crystallization of FAPbI3: polytypes and stacking faults"
<p>XYZ trajectories of (100)-seeded MD simulations of crystal growth of FAPbI3</p>
Growth - related formation mechanism of I3 - type basal stacking fault in epitaxially grown hexagonal Ge - 2H
<p>The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal(2H)Gephaseis a challenge that can be overcome by usingwurtziteGaAsnanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I3-type are formed in themetastable2H structure. The growth of such core/shell heterostructures has been observed in situ and in real-time by means of environmental transmission electron microscopy using chemical vapor deposition. The observations provide direct evidence of a step-flow growth of the Ge-2H epi layer and reveal the growth-related formation of I3-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these in situ observations we can propose a scenario for the nucleation of I3-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for the perfect crystalline synthesis of SiGe-2H.</p> <p>This dataset contains all the original scanning and transmission electron microscopy images and videos, and the atomic models that our results and understanding of the I3 defects are based on.</p>
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Allen Brain Atlas
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DANDI Archive for NWB datasets
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International Brain Laboratory public data
The International Brain Laboratory public data releases expose standardized mouse decision-making experiments, including Neuropixels recordings, widefield calcium imaging, behavior, and session metadata accessed through the ONE API.
OpenNeuro
OpenNeuro is a free, open platform for sharing neuroimaging datasets, with public search, dataset pages, and download paths for web, S3, DataLad, and the OpenNeuro CLI.