Tilted fluctuation electron microscopy data from simulated and deposited amorphous Ta

<p>These datasets were used to compare fluctuation electron microscopy analysis methods on simulated and sputter deposited amorphous tantalum. The Ta is 8 nm thick in both the simulated and deposited samples. The deposited Ta is sandwiched between two layers of amorphous 10 nm-thick SiN_x. Data are&nbsp;also provided for SiN_x&nbsp;deposited on&nbsp;SiN_x.</p> <p>Deposited Ta FEM patterns were collected on a TitanX at 200 kV with a convergence angle of 0.51 mrad and a camera length of 300 mm. Simulated Ta FEM patterns were generated using the Prismatic STEM simulation software (see references).</p> <p>The samples were tilted between 0^o&nbsp;and 45^o&nbsp;in 15^o&nbsp;increments.&nbsp;</p> <p><strong>Deposited Ta:&nbsp;</strong></p> <p>.dm4 (Gatan DigitalMicrograph) files are provided with the raw scanning nanodiffraction data for each tilt angle</p> <p>.png images of the mean CBED pattern for each tilt angle are provided</p> <p><strong>Simulated Ta:</strong></p> <p>.h5, .xyz (atomic coordinates), and .txt (Prismatic input parameters defined)&nbsp;files are provided with the raw scanning nanodiffraction data for each tilt angle</p> <p>.png images of the mean CBED pattern for each tilt angle are provided</p> <p>&nbsp;</p> <p>The atomic coordinates for the simulated Ta were provided by Jun Ding. Simulated FEM patterns were produced by Luis Rangel DaCosta using Prismatic STEM simulation software. Neal Reynolds grew the experimental Ta and SiN_x&nbsp;thin films.</p>