Examples of ALD saturation profiles in rectangular channel LHAR structures simulated with a diffusion-reaction model

<p>Examples of atomic layer deposition ALD saturation profiles in rectangular channel LHAR structures simulated with a diffusion-reaction model by Ylilammi et al. (Journal of Applied Physics&nbsp;<strong>123</strong>, 205301 (2018);&nbsp;<a href="https://doi.org/10.1063/1.5028178">https://doi.org/10.1063/1.5028178</a>) as function of (a) Reactant A pulse time <em>t</em>, (b) Reactant A partial pressure <em>p</em>, and (c) sticking coefficient <em>c</em>. Parameters used in the simulation, if not otherwise stated: channel height <em>H</em> 500 nm, temperature 250&deg;C, 250 cycles, inert carrier gas partial pressure 500 Pa, Reactant A molar mass 100 g/mol, inert carrier gas molar mass 28 g/mol, Reactant A diameter 0.600 nm, inert gas diameter 0.374 nm, adsorption capacity 4 metal atoms per nm², density of the material grown 3.5 g/cm³, pulse time 0.1 s, Reactant A partial pressure 100 Pa, sticking coefficient 0.01.&nbsp;</p> <p>Abbreviations: ALD = atomic layer deposition, LHAR = lateral high aspect ratio</p>