Electrical properties of Bi-implanted amorphous chalcogenide films

<p>Y. G. Fedorenko^1a, M. A. Hughes¹, J. L. Colaux¹, C. Jeynes¹, R. M. Gwilliam¹, K. Homewood¹, B. Gholipour², J. Yao², D. W. Hewak², T.-H. Lee³, S. R. Elliott³ and R. J. Curry¹</p> <p>¹Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom</p> <p>²Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom</p> <p>³Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United Kingdom</p> <p>&nbsp;</p> <p>^aPresent address: Department of Physics, University of Liverpool, The Oliver Lodge Laboratory,&nbsp; Liverpool L69 7ZE,&nbsp; United Kingdom</p>