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Figure 3: The dependencies ² 00 (log !¿¾). The values are normalized at ² 00 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE

Fig.3. The conductivity relaxation occurs at lowing frequencies. The form of the ² 00 (!) = f(² 0 (!)) diagrams changes from a vertical line (a), to any deformate semicircles (b, c, d) having the angle to real axe below ¼ 2 , Fig.4. This behaviour denotes that the EDL is not an ideally capacitor, but also is not a disipative region, depending both on the EDL thickness and the frequency range of the applied ¯eld [7]. The composition (by thickness) of the EDL determines essentially the dielectric response of the interface system. Compared with experimental results, the dielectric pro¯le of this higher length scales model, can provides a more complet description of the solvent properties for a given electrode.

ShareScore

40/100

Overall dataset sharing score

Score breakdown

These five areas show where the dataset supports — or may limit — practical reuse.

Stewardship: 8
Harmonization: 4
Access: 20
Reuse readiness: 8
Engagement: 0

Topics

nanochannel dielectric analysis electrical double layer low-frequency permittivity ionic strength

Figure 3: The dependencies ² 00 (log !¿¾). The values are normalized at ² 00 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE

Score breakdown

Topics

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