Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment

<p><strong>This data is accessible for bona-fide users upon request to the point of contact.</strong></p> <p>&nbsp;</p> <p>Data for the paper with the following abstract:</p> <p>In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralising or inducing compressive or tensile states) in suspended thin films. Emphasising the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap group-IV semiconductor that is compatible with complementary metal-oxide-semiconductor technology, we underscore the distinctive features of different methods of ion beam-induced alterations of material morphology. The article examines the precautions needed during experimental procedures and data analysis and explores routes for potential scalable adoption by the semiconductor industry. Finally, as an example of an application we briefly discuss how this highly controllable strain-inducing technique can facilitate enhanced manipulation of impurity-based spin quantum bits (qubits).</p> <p>&nbsp;</p> <p>Paper published as:&nbsp;</p> <p>Mateus G Masteghin <em>et al</em> 2024 <em>J. Phys.: Condens. Matter</em> <strong>36</strong> 431501</p> <p><strong>DOI</strong> 10.1088/1361-648X/ad649f</p>