Data set of "Large superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire/topological Dirac semimetal planar heterostructures"

<p><span>Superconductor/topological material heterostructures are intensively studied as a platform for topological superconductivity and Majorana </span><span>physics</span><span>. However, the high cost of nanofabrication and the difficulty of preparing high-quality interfaces between the two dissimilar materials are common obstacles that hinder the observation of intrinsic physics and </span><span>the </span><span>realisation of scalable topological devices and circuits. </span><span>Here,&nbsp;we demonstrate an innovative method to directly draw nanoscale superconducting </span><span><span>beta-tin (</span></span><span><span>&beta;-Sn</span></span><span><span>)</span></span><span><span> patterns of any shape in the plane of a topological Dirac </span></span><span><span>semimetal</span></span><span><span> (TDS) </span></span><span><span>alpha-tin (</span></span><span><span>&alpha;-Sn</span></span><span><span>)</span></span><span><span> thin </span></span><span><span>film</span></span><span><span>&nbsp;by irradiating a focused ion beam (FIB</span></span><span><span>). We utilise</span></span><span><span> the property that &alpha;-Sn undergoes a phase transition to superconducting &beta;-Sn upon heating by FIB. </span></span><span><span>In &beta;-Sn nanowires embedded in a TDS &alpha;-Sn thin film, we observe large </span></span><span><span>non-reciprocal</span></span><span><span> superconducting transport, where the critical current changes by 69% upon reversing the current direction. The superconducting diode rectification ratio <em>&eta;</em> reaches a maximum of 35% when the magnetic field is applied parallel to the current, </span></span><span><span>distinguishing</span></span><span><span> itself from all the previous reports</span></span><span><span>. Moreover, it</span></span><span><span> oscillates between alternate signs with increasing magnetic field strength. </span></span><span><span>The angular</span></span><span><span> dependence of <em>&eta;</em> on the magnetic field and current directions is similar to that of the chiral anomaly effect in TDS &alpha;-Sn, suggesting that the </span></span><span><span>SDE</span></span><span><span> may occur at the &alpha;-Sn/</span></span><span><span>&beta;</span></span><span><span>-Sn interfaces where the TDS &alpha;-Sn becomes superconducting by a proximity effect.</span></span><span><span> As superconducting TDSs are expected candidates for topological superconductivity and harboring Majorana bound states,</span></span><span><span>&nbsp;t</span></span><span><span>he ion-beam patterned Sn-based superconductor/TDS planar structures thus </span></span><span><span>show promise</span></span><span><span> as a universal platform for investigating novel quantum physics and devices based on topological superconducting circuits of any shape.</span></span></p>