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3 results for “Cu2ZnSnS4”

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zenodo40/100

Data for "Lone-pair effect on carrier capture in Cu2ZnSnS4 solar cells"

<p>Data for &quot;Lone-pair effect on carrier capture in Cu2ZnSnS4 solar cells&quot;</p> <p>Dataset required for the analysis for &quot;<a href="https://pubs.rsc.org/en/content/articlelanding/2019/ta/c8ta10130b">Lone-pair effect on carrier capture in Cu2ZnSnS4 solar cells</a>&quot;. The dataset consists of:</p> <ul> <li>Crystal structures upon which first-principles (DFT) calculations were carried out in the original publication (DFT_calculations.tar)</li> <li>Python script to reproduce figures and data in the publication (data_process.zip)</li> </ul>

opencc-by-4.0Dec 2019View details →
zenodo36/100

Dataset for "Open-Circuit Voltage Deficit in Cu2ZnSnS4 Solar Cells by Interface Band Gap Narrowing"

<p><strong>Files in &quot;ExchangeCorrelation&quot;: POSCAR_material_Exc</strong></p> <p><em>material</em></p> <ul> <li>CdS&nbsp;</li> <li>CZTS = Cu2ZnSnS4</li> <li>CZTSe = Cu2ZnSnSe4</li> </ul> <p><em>Exchange-correlation functionals</em></p> <ul> <li>PBE</li> <li>RP = revised PBE</li> <li>PBEsol</li> <li>AM05</li> <li>SCAN</li> <li>HSE06</li> <li>6_6: PBE+U (U= 6 eV for Cu d and Zn d)</li> <li>8_8: PBE+U (U= 8 eV for Cu d and Zn d)</li> </ul> <p><strong>Files in &quot;Interface&quot;</strong></p> <p>POSCAR_S_fixed: CZTS/CdS interface, CdS layers were fully relaxed.<br> POSCAR_S_PBE_U: CZTS/CdS interface, the atomic coordinates were relaxed using PBE+U<br> POSCAR_S_SCAN_U: CZTS/CdS interface, the atomic coordinates were relaxed using SCAN+U<br> POSCAR_Se_fixed: CZTSe/CdS interface, CdS layers were fully relaxed.<br> POSCAR_Se_PBE_U: CZTSe/CdS interface, the atomic coordinates were relaxed using PBE+U<br> POSCAR_Se_SCAN_U: &nbsp;CZTSe/CdS interface, the atomic coordinates were relaxed using SCAN+U</p>

opencc-by-4.0Nov 2018View details →
zenodo16/100

Efficiency enhancement of Cu2ZnSnS4 monograin layer solar cells via absorber post-growth treatments

<p>Currently, the efficiency of Cu2ZnSnS4 (CZTS) monograin layer solar cells is mainly limited by the recombination losses in the bulk and at the surface of absorber/buffer that need to be reduced. One approach to significantly improve the performance of CZTS monograin layer solar cells is to post-treat the surfaces of monograin powder crystals before the buffer layer deposition. This study includes the optimization of two sequential post-treatment steps: 1) chemical etching of as-grown powder crystals with Br2 in methanol followed by KCN; and 2) annealing at different temperatures (550&ndash;850&nbsp;&deg;C) under different sulfur vapor pressures (100&ndash;2050&nbsp;Torr) in a two-temperature zone furnace in closed ampoules. Energy-dispersive X-ray spectroscopy, high-resolution scanning electron microscopy and Raman studies using multiwavelength excitation revealed that SnS2 and ZnS secondary phases were formed on the crystals&rsquo; surfaces in the thermal annealing process. At the same time, by increasing the annealing temperature, the ratio of Cu/(Zn&nbsp;+&nbsp;Sn) increased and Zn/Sn decreased in the bulk of annealed CZTS crystals compared to as-grown monograin powder crystals. Optimal conditions for combinational post-treatment to adjust the absorber material composition and to improve monograin layer solar cells&#39; performance were found as follows: the chemical etching of as-grown powders with 1% Br2&ndash;MeOH for 5&nbsp;min&nbsp;+&nbsp;10% KCN for 5&nbsp;min followed by annealing in sealed ampoules at 850&nbsp;&deg;C in a sulfur atmosphere of 2050&nbsp;Torr for 1&nbsp;h. The highest power conversion efficiency of 9.44% was obtained under these conditions.</p>

restrictedApr 2023View details →

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