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ShareScore release 0.9.0
Dataset results
13 results for “epitaxial films”
Ultrathin epitaxial Bi film growth on 2D HfTe2 template (data)
<p>This dataset contains the raw data files connected to the figures included in the paper "<em>Ultrathin epitaxial Bi film growth on 2D HfTe<sub>2</sub> template</em>" by E. Xenogiannopoulou et al., 2022 <em>Nanotechnology</em> <strong>33</strong> 015701; <a href="https://doi.org/10.1063/5.0038799">https://doi.org/10.1088/1361-6528/ac2d08</a></p> <p>An Open Access version of the paper can be found here: <a href="https://zenodo.org/record/4562057#.YaDC4NBBxPY">https://zenodo.org/record/5720132#.YaDKWNBBxPb</a></p>
Data for: Magnetic-field-assisted molecular beam epitaxy: Engineering of Fe3O4 ultrathin films on MgO(111)
<p>Molecular beam epitaxy is widely used for engineering low-dimensional materials. Here, we present a novel extension of the capabilities of this method by assisting epitaxial growth with the presence of an external magnetic field (MF). MF-assisted epitaxial growth was implemented under ultra-high vacuum conditions thanks to specialized sample holders for generating in-plane or out-of-plane MF and dedicated manipulator stations with heating and cooling options. The significant impact of MF on the magnetic properties was shown for ultra-thin epitaxial magnetite films grown on MgO(111). Using in situ and ex situ characterization methods, scanning tunneling microscopy, conversion electron Mössbauer spectroscopy, and the magneto-optic Kerr effect, we showed that the in-plane MF applied during the reactive deposition of 10 nm Fe3O4(111)/MgO(111) heterostructures influenced the growth morphology of the magnetite films, which affects both in-plane and out-of-plane characteristics of the magnetization process. The observed changes are explained in terms of modification of the effective magnetic anisotropy.</p>
Data for: Magnetic-field-assisted molecular beam epitaxy: Engineering of Fe3O4 ultrathin films on MgO(111)
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Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
<p>Raw dataset corresponding to https://doi.org/10.1038/s41467-022-31610-y</p>
Selective-Area Epitaxy of Bulk-Insulating (BixSb1-x)2Te3 Films and Nanowires by Molecular Beam Epitaxy
<p>This folder contains the data files used in the generation of the main and supplementary figures of our publication in <a href="https://pubs.acs.org/doi/full/10.1021/acsami.4c06146">ACS Applied Materials & Interfaces</a>, <br>titled: "Selective-Area Epitaxy of Bulk-Insulating (BixSb1-x)2Te3 Films and Nanowires by Molecular Beam Epitaxy", <br>written by G. Lippertz, O. Breunig, R. Fister, A. Uday, A. Bliesener, J. Brede, A. Taskin, and Y. Ando.</p> <p>The measurement data for each figure can be found in csv format in the corresponding folder. The labels and units are specified in the file headers. The main and supplementary figures of the manuscript are added as well in pdf format.</p>
Advanced Materials - Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget
<p>2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO<sub>2</sub>) and silicon nitride (SiN<em><sub>x</sub></em>). Here, a seeded growth technique for crystallizing CrTe<sub>2</sub> films on amorphous SiN<em><sub>x</sub></em>/Si and SiO<sub>2</sub>/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe<sub>2</sub> devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 ×  10<sup>7</sup> ℏ/2e  Ω⁻¹  m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.</p>
Pole Figures for Response to Technical Comment on "Spin Coating Epitaxial Films"
<p>Pole figures for spin coated films. In each figure <strong>(A)</strong> is the data as reported in <em>Science</em> <strong>364</strong>, 166-169 (2019), and <strong>(</strong><strong>B)</strong> is the data that is re-scaled with fewer contours so as to minimize that background intensity that is due primarily to the substrate.</p>
Single-layer graphene on epitaxial FeRh thin films_experimental dataset
<p>This file contains the raw unprocessed experimental data for the results published in Uhlíř et al., Single-layer graphene on epitaxial FeRh thin films, Applied Surface Science, Volume 514, June 2020, 145923. </p>
INFLUENCE OF THE RARE EARTH ELEMENT YB ON THE PHOTOLUMINOSCENCE PROPERTIES OF EPITAXIAL FILMS OF GAAS AND ALXGA1-XAS
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Raw data of "Heterogeneous integration of superconducting thin films and epitaxial semiconductor heterostructures with Lithium Niobate"
<p>Raw data used to produce figures</p>
Data from: Epitaxial K0.5Na0.5NbO3 thin films by aqueous chemical solution deposition
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APPLICATION OF DIELECTRIC AND CONDUCTIVE EPITAXIAL FILMS IN SILICON TECHNOLOGY
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PECULIARITIES OF EPITAXIAL DIFFUSION CoSi2 FILMS GROWN ON THE SURFACE OF FLUORITE
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International Brain Laboratory public data
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OpenNeuro
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