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18 results for “ion implantation”
Ion Implantation Sensor and Process Target Data for Predicting Ion Beam Tuning in Semiconductor Manufacturing
<h2><strong>Dataset Description:</strong></h2> <p>This dataset is designed to predict ion beam tuning setup processes in semiconductor manufacturing, in terms of tuning success or failure, and tuning duration. It is split into <strong><code>X</code></strong> and <code><strong>y</strong></code> to allow for supervised learning approaches.</p> <ul> <li><code><strong>X</strong></code> represents the current equipment condition and the process targets of the currently processed and the upcoming lot, as defined within recipes.</li> <li><code><strong>y</strong></code> represents the ion beam tuning setup report, which informs about the tuning success ratio and tuning duration. These setups are necessary, when switching between recipes to prepare the equipment for processing the next lot. <strong><code>y</code></strong> contains three labels, enabling classification of (1) tuning success or fail, and (2) prolonged tuning, as well as (3) estimation of tuning duration as a regression task.</li> </ul> <p>About <strong><code>X</code></strong>:</p> <p>Each lot is processed with a specific recipe to achieve the process target. The tuning takes place before the first wafer of the to-be-tuned recipe is processed. Each row in <strong><code>X</code></strong> includes logistical information such as the equipment used for processing and parsed recipe / process target information for the current and upcoming lot. The majority of data consists out of aggregated metrics of equipment-internally tracked sensor traces, recording physical parameters such as gas flows, temperatures, voltages and currents. When analyzed in conjunction with the processed recipe, these sensors provide insights into the current equipment condition. </p> <p>About <code><strong>y</strong></code>:</p> <p>The <code>setup_result</code> column indicates the success or failure of tuning - with <code>setup_result=0</code> indicating tuning success, while <code>setup_result=1</code> signals tuning failure. If the first tuning attempt fails, there may be follow-up attempts, but these are not included in this dataset. The <code>duration</code> column represents the tuning duration in seconds, as used for regression analysis. The <code>duration_interval</code> column is a binary label for prolonged tunings, i.e. <code>duration_interval=1</code> for instances, which take more than 6 minutes to tune.</p> <p>For reproducibility of the corresponding paper's results:</p> <ol> <li>The dataset contains the same carefully curated subset of features.</li> <li>The train_test_split() has already been performed, thus we provide <code>x_train</code> and <code>x_valid</code> separately.</li> <li>To reduce the effect of outliers in the data, the sensor data has already been scaled, as derived from <code>x_train</code>.</li> </ol> <p>In summary, these datasets (<code><strong>X</strong></code>, <code><strong>y</strong></code>) provide comprehensive information for predicting ion beam tuning in semiconductor manufacturing, making it a valuable resource for researchers and practitioners in the field.</p> <h2><strong>Python Code for Reproducibility:</strong></h2> <p>Furthermore, we share a jupyter notebook <code>ionbeamtuning.ipynb</code> with Python code to train the best performing model on the provided data, as described in the paper. To execute the code, you may need to install any missing packages specified in the <code>requirements.txt</code>, as indicated within the notebook.</p>
Data of the publication Hot ion implantation to create dense NV center ensembles in diamond
<p>Data of the publication published under the reference: M.W.<em> </em>Ngambeu Ngambou, Appl. Phys. Lett. 124, 134002 (2024).</p>
Data of the publication Optimizing ion implantation to create shallow NV centre ensembles in high-quality CVD diamond
<p>Data of the publication published by IOP under the reference: Midrel Wilfried Ngandeu Ngambou <em>et al</em> 2022 <em>Mater. Quantum. Technol.</em> <strong>2</strong> 045001 .</p>
The response of silicon carbide composites to He ion implantation and ramifications for use as a fusion reactor structural material
<p>Raw datasets for the publication "The response of silicon carbide composites to He ion implantation and ramifications for use as a fusion reactor structural material".</p>
Dataset for published paper: Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation
<p>This dataset contains the measurement results described in the paper 'Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation'.</p>
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing
<p>Dataset for the paper </p><h2><strong>Study of W centers formation in silicon upon ion implantation and rapid thermal annealing</strong></h2><p><strong>doi: </strong>https://doi.org/10.1109/SUM57928.2023.10224442</p>
Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation - Supportive Information
<p>An on-chip asymmetric directional coupler (DC) can convert fundamental modes to higher-order modes and is one of the core components of mode-division multiplexing (MDM) technology. In this study, we propose that waveguides of the asymmetric DC can be trimmed by silicon ion implantation to tune the effective refractive index and facilitate mode conversion into higher-order modes. Through this method of tuning, transmission changes of up to 18 dB have been realized with one ion implantation step. In addition, adjusting the position of the ion implantation on the waveguide can provide a further degree of control over the transmission into the resulting mode. The results of this work present a promising new route for the development of high-efficiency, low-loss mode converters for integrated photonic platforms, and aim to facilitate the application of MDM technology in emerging photonic neuromorphic computing.</p>
Data set for paper 'Impact of post-ion implantation annealing on Se-hyperdoped Ge'
<p><strong>Description of the files</strong></p> <p>Files are named by the same figure order appearing in the paper and supplementary material. File types contain:<br>- *.csv: Comma separated values. <br>- *.fibps: Raw data obtained with the 3D optical profilometer, which can be opened and analyzed by ProfilmOnline at https://www.profilmonline.com/. Figures shown in the paper were croped from the top-left corner with areas of about 60x60 µm2 from the raw data. Alternatively all 3D profilometer data shown in the paper can be obtained and analyzed in https://www.profilmonline.com/shared-folder?token=S32NP82HtLC3<br>- *.tif: Image generated from scanning electron microscope. </p> <p> </p> <p><strong>Original paper:</strong> https://doi.org/10.1063/5.0213637</p> <p><strong>Supplementary material:</strong> https://doi.org/10.60893/figshare.apl.c.7322108</p> <p> </p> <p><strong>When using the dataset, please cite the original paper: Xiaolong Liu, Patrick McKearney, Sören Schäfer, Behrad Radfar, Yonder Berencén, Ulrich Kentsch, Ville Vähänissi, Shengqiang Zhou, Stefan Kontermann, Hele Savin; Impact of post-ion implantation annealing on Se-hyperdoped Ge. Appl. Phys. Lett. 22 July 2024; 125 (4): 042102. https://doi.org/10.1063/5.0213637.</strong></p> <p> </p>
Metal Ion Release From an FDA-Approved Metal-on-Metal Total Hip Replacement Implant
ClinicalTrials.gov study NCT00962351. IPD Sharing: Not stated. Countries: 2. Publications: 1.
Data from: Chromium oxide coatings with the potential for eliminating the risk of chromium ion release in orthopaedic implants
Chromium oxide coatings prepared by radiofrequency reactive magnetron sputtering on stainless steel substrates were exposed to Ringer's physiological solution and tested for their electrochemical corrosion stability using an open circuit potential measurement, potentiodynamic polarization, electrochemical impedance spectroscopy and Mott–Schottky analysis. The coatings were found to be predominantly Cr2O3, based on the observation of the dominance of A1gA1g and Eg symmetric modes in our Raman spectroscopic investigation and the Eu vibrational modes in our Fourier transform infrared spectroscopic measurements on the coatings. We investigated for the presence of chromium ions in Ringer's solution after all of the above electrochemical tests using atomic absorption spectroscopy, without finding a trace of chromium ions at the ppm level for coatings tested under open circuit and at the lower potentials implants are likely to experience in the human body. The coatings were further exposed to Ringer's solution for one month and tested for adhesion strength changes, and we found that they retained substantial adhesion to the substrates. We expect this finding to be significant for future orthopaedic implants where chromium ion release is still a major challenge.
The response of silicon carbide composites to He ion implantation and ramifications for use as a fusion reactor structural material
<p>Raw and processed datasets for the publication "The response of silicon carbide composites to He ion implantation and ramifications for use as a fusion reactor structural material".</p>
Scalable Non-Volatile Tuning of Photonic Computational Memories by Automated Silicon Ion Implantation
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Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing
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Efficiency Optimization of Ge-V Quantum Emitters in Single-Crystal Diamond upon Ion Implantation and HPHT Annealing
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Scalable Non-Volatile Tuning of Photonic Computational Memories by Automated Silicon Ion Implantation - Supporting Information
<p>Photonic integrated circuits (PICs) are revolutionizing the realm of information technology, promising unprecedented speeds and efficiency in data processing and optical communication. However, the nanoscale precision required to fabricate these circuits at scale presents significant challenges, due to the need to maintain consistency across wavelength-selective components, which necessitates individualized adjustments after fabrication. Harnessing spectral alignment by automated silicon ion implantation, in this work scalable and non-volatile photonic computational memories are demonstrated in high-quality resonant devices. Precise spectral trimming of large-scale photonic ensembles from a few picometers to several nanometres is achieved with long-term stability and marginal loss penalty. Based on this approach, spectrally aligned photonic memory and computing systems for general matrix multiplication are demonstrated, enabling wavelength multiplexed integrated architectures at large scales.</p>
Data from: Chromium oxide coatings with the potential for eliminating the risk of chromium ion release in orthopaedic implants
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Nitrogen-ion-beam implantation effect on rice dry seeds
GEO Series GSE36152. Oryza sativa Japonica Group; Oryza sativa. 9 samples. Type: Expression profiling by array.
STUDY OF THE DISTRIBUTION PROFILE OF ION IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTURE OF IRON SILICIDES
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