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5 results for “room temperature ferromagnetism”
Increased room temperature ferromagnetism in Co-doped tetrahedral perovskite niobates
<p>Dilute magnetic semiconductors (DMSs), such as (In, Mn)As and (Ga, Mn)As prototypes, are limited to III–V semiconductors with Curie temperatures (<i>T</i><sub>c</sub>) far from room temperature, thereby hindering their wide application. Here, one kind of DMS based on perovskite niobates is reported. BaM<sub>x</sub>Nb<sub>(1-x)</sub>O<sub>3-δ</sub> (M=Fe, Co) powders are prepared by the composite-hydroxide-mediated method. The addition of M elements endows BaM<sub>x</sub>Nb<sub>(1-x)</sub>O<sub>3-δ</sub> with local ferromagnetism. The tetragonal BaCo<sub>x</sub>Nb<sub>(1-x)</sub>O<sub>3-δ</sub> nanocrystals can be obtained by Co doping, which shows strong saturation magnetization(<i>M</i><sub>sat</sub>) of 2.22 emu/g, a remnant magnetization(<i>M</i><sub>r</sub>) of 0.084 emu/g, and a small coercive field(<i>H</i><sub>c</sub>) of 167.02 Oe at room temperature. The ab initio calculations indicate that Co doping could lead to a 64% local spin polarization at the Fermi level(E<sub>F</sub>) with net spin DOS of 0.89 electrons·eV<sup>-1</sup>, this result shows the possibility of maintaining strong ferromagnetism at room temperature. In addition, the trade-off effect between the defect band absorption and ferromagnetic properties of BaM<sub>x</sub>Nb<sub>(1-x)</sub>O<sub>3-δ</sub> is verified experimentally and theoretically.</p>
Increased room temperature ferromagnetism in Co-doped tetrahedral perovskite niobates
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Data from: Current-induced switching of a van der Waals ferromagnet at room temperature
<p>The recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub> using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as <em>J</em><sub>SW</sub> = 1.69 × 10<sup>6 </sup>A cm<sup>-2</sup> at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe<sub>3</sub>GaTe<sub>2</sub>/Pt bilayer system to be <em>ξ</em><sub>DL</sub> = 0.093, using the second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, energy-efficient spintronic devices.</p>
Data from: Current-induced switching of a van der Waals ferromagnet at room temperature
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Data for figures in "Tuning Ferromagnetism at Room Temperature by Visible Light"
<p>Data used to producing the figures in "Tuning Ferromagnetism at Room Temperature by Visible Light"</p>
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