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3 results for “spin-orbit splitting”

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zenodo36/100

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

<p>OPEN DATA related to the research publication:</p> <p>Sai, P., Potashin, S. O., Szoła, M., Yavorskiy, D., Cywiński, G., Prystawko, P., ... &amp; Kachorovskii, V. Y. (2021). <strong>Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting.</strong>&nbsp;<em>Physical Review B</em>,&nbsp;<em>104</em>(4), 045301 [arXiv:2102.12791].</p> <p><em>Abstract</em>:&nbsp;We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with a lateral superlattice formed by a dual-grating gate structure. We demonstrate that irradiation of the superlattice with a terahertz beam results in the&nbsp;<em>direct</em>&nbsp;ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov&ndash;de Haas oscillations. The oscillations have the same period and are in phase with the resistivity oscillations. Remarkably, their amplitude is greatly enhanced as compared with the ratchet current at zero magnetic field, and the envelope of these oscillations exhibits large beatings as a function of the magnetic field. We demonstrate that the beatings are caused by the spin-orbit (SO) splitting of the conduction band. We develop a theory which gives a good qualitative explanation of all experimental observations and allows us to extract the SO splitting constant&nbsp;&alpha;<sub>SO</sub>=7.5&plusmn;1.5&nbsp;meV&Aring;. We also discuss how our results are modified by plasmonic effects and show that these effects become more pronounced with decreasing the period of the grating gate structures down to submicrons.</p>

opencc-by-4.0Feb 2022View details →
dryad28/100

Quantum interference between spin-orbit split partial waves in the F+HD→HF+D reaction

Open the record for dataset details and reuse information.

publicFeb 2021View details →
zenodo16/100

Valence band-anticrossing in GaP1−xBix dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy

<p>Using spectroscopic ellipsometry measurements on GaP1&minus;xBix/GaP epitaxial layers up to&nbsp;x&nbsp;=&nbsp;3.7% we observe a giant bowing of the direct band gap (Eg&Gamma;) and valence band spin-orbit splitting energy (∆SO).&nbsp;Eg&Gamma;&nbsp;(∆SO) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in&nbsp;∆SO&nbsp;in going from GaP to GaP0.99Bi0.01. The evolution of&nbsp;Eg&Gamma;&nbsp;and&nbsp;∆SO&nbsp;with&nbsp;x&nbsp;is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of&nbsp;Eg&Gamma;&nbsp;and&nbsp;∆SO&nbsp;with&nbsp;x. In contrast to the well-studied GaAs1&minus;xBix&nbsp;alloy, in GaP1&minus;xBix&nbsp;substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of&nbsp;Eg&Gamma;&nbsp;and&nbsp;∆SO and in particular for the giant bowing observed for&nbsp;x &lt;=􏰁&nbsp;1%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP1&minus;xBix&nbsp;alloy band structure.</p> <p>&nbsp;</p> <p>&nbsp;</p>

restrictedApr 2019View details →

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