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18 results for “van der Waals heterostructures”
Supporting data for "Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures"
<p>Dataset for the publication "Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures"</p>
Dataset of the publication: Strain Switching in van der Waals Heterostructures Triggered by a Spin-Crossover Metal–Organic Framework
<p>Dataset of the publication: Strain Switching in van der Waals Heterostructures Triggered by a Spin-Crossover Metal–Organic Framework</p> <p>DOI: 10.1002/adma.202110027</p> <p>Boix-Constant, Carla; Garcia-Lopez, Victor; Navarro-Moratalla, Efren; Clemente-Leon, Miguel; Zafra, Jose Luis; Casado, Juan; Guinea, Francisco; Manas-Valero, Samuel; Coronado, Eugenio</p> <p> Adv. Mater. 34, 2110027 (2022)</p>
Dataset of the publication: Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements
<p>Dataset of the publication: Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements</p> <p>DOI: 10.1002/adma.202204940</p> <p>C. Boix-Constant, S. Mañas-Valero, A. M. Ruiz, A. Rybakov, K. A. Konieczny, S. Pillet, J. J. Baldoví, E. Coronado</p> <p>Adv. Mater., 34, 2204940 (2022)</p>
Data for: Quantum microscopy with van der Waals heterostructures
<p>Data repositiory for <em>Quantum microscopy with van der Waals heterostructures</em>.</p> <p>See README.txt in zip for details.</p>
Tailoring optical properties of 2D semiconductors in van der Waals heterostructures
<p>Dataset for the publication 'Tailoring the dielectric screening in WS<sub>2</sub>-graphene heterostructures'</p>
Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics (Dataset)
<p>Dataset of the vertical Au-C60-Gr stacks measurements related to the publication: "Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics", ACS, Appl. Nano Mater., 2023.</p> <p>The dataset includes:</p> <ol> <li>AFM raw data</li> <li>Raman spectroscopy raw data</li> <li>Room temperature measurements</li> <li>Impedance analysis measurements</li> <li>Temperature dependent measurements</li> </ol> <p> </p>
Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures (Dataset)
<p>Dataset of the vertical Au-P3HT-Gr stacks measurements related to the publication: "Charge Transport Across Au–P3HT–Graphene van der Waals Vertical Heterostructures", ACS, Appl. Mater. Interfaces, 2022.</p> <p>The dataset includes:</p> <ol> <li>AFM raw data</li> <li>Raman spectroscopy raw data</li> <li>Room temperature measurements</li> <li>Impedance analysis measurements</li> <li>Temperature dependent measurements</li> </ol>
Control of Charge-Spin Interconversion in van der Waals Heterostructures with Chiral Charge Density Waves
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Gate-Tunable Spin Hall Effect in Trilayer Graphene/Group-IV Monochalcogenide van der Waals Heterostructures
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Dynamics of an interfacial bubble controls adhesion mechanics in a van der Waals heterostructure
<p>These are the COMSOL Multiphysics for our FEM calculations of frequency dispersion with gate voltage (<span class="math-tex">\(V_g^{dc}\)</span>) and stress at different values of <span class="math-tex">\(V_g^{dc}\)</span> for different conditions of graphene-hBN heterostructure interface. For the bubble growth rate equation, we considered linear gate-voltage dependence. Bubble growth will be restricted as the bubble diameter reaches the diameter of the drum. So the growth is conditional, it increases as the gate voltage increases with a constant slope till its radius reaches the drum radius (<span class="math-tex">\(R_f \)</span>); its governing equation is <span class="math-tex">\(R_{\textrm{bub}}(V_g^{\textrm{dc}})=R_i+mV_g^{\textrm{dc}} for R_{bub}\leq R_f\)</span> . Bubble growth stops at <span class="math-tex">\(R_{bub} ≈ R_f \)</span>, where <span class="math-tex">\(R_i \)</span>, <span class="math-tex">\(R_f \)</span>are the initial and final radii of the bubble and m is the increase in bubble radius per unit change in gate voltage (<span class="math-tex">\(µm/V\)</span>).</p>
Experimental results for Dynamics of an interfacial bubble controls adhesion mechanics in a van der Waals heterostructure
<p>These are the COMSOL Multiphysics file used for our FEM calculations of frequency dispersion with gate voltage (<span class="math-tex">\(V_g^{dc}\)</span>) and stress at different values of <span class="math-tex">\(V_g^{dc}\)</span> for different conditions of graphene-hBN heterostructure interface. For the bubble growth rate equation, we considered linear gate-voltage dependence. Bubble growth will be restricted as the bubble diameter reaches the diameter of the drum. So the growth is conditional, it increases as the gate voltage increases with a constant slope till its radius reaches the drum radius (<span class="math-tex">\(R_f \)</span>); its governing equation is <span class="math-tex">\(R_{\textrm{bub}}(V_g^{\textrm{dc}})=R_i+mV_g^{\textrm{dc}} for R_{bub}\leq R_f\)</span> . Bubble growth stops at <span class="math-tex">\(R_{bub} ≈ R_f \)</span>, where <span class="math-tex">\(R_i \)</span>, <span class="math-tex">\(R_f \)</span>are the initial and final radii of the bubble and m is the increase in bubble radius per unit change in gate voltage (<span class="math-tex">\(µm/V\)</span>).</p>
Systematic DFT Modeling van der Waals Heterostructures from a Complete Configurational Basis Applied to γ-PC/WS2
<p>See the paper:</p> <p> </p> <p>Celis, J.; Cao, W. <em>J. Chem. Theory Comput.</em> <strong>2024</strong>, 20, 6, 2377-2389</p>
Datesets and images of the publication "Probing crystallinity and grain structure of 2D materials and 2D-like van der Waals heterostructures by low-voltage electron diffraction" - DOI: 10.1002/pssa.202300148
<p>Datasets and images of the publication "Probing crystallinity and grain structure of 2D materials and 2D-like van der Waals heterostructures by low-voltage electron diffraction" - DOI: <a href="https://www.doi.org/10.1002/pssa.202300148">10.1002/pssa.202300148</a></p> <p>The Jupyter Notebooks for analyzing the datasets and generating all the figures are available at <a href="https://gitlab.com/JohMu/tds_hios_manuscript">https://gitlab.com/JohMu/tds_hios_manuscript</a>.</p> <p><strong>MoS<sub>2</sub> 4D-STEM dataset:</strong></p> <ul> <li>192x192 scan pixels</li> <li>200x200 camera pixels</li> <li>Acceleration voltage: 20kV</li> <li>Camera length: 10.56 mm</li> <li>Camera pixel size: 4x5.86 µm = 23.44 µm (original dataset with 4x4 binning)</li> <li>File location: Figure 2_3_S1.zip -> 230101205338_20kV_hexz0_camz-10_posi_003_good\scan_data_bin2_centered_crop-imgNx200.h5</li> <li>The original raw dataset (23 GB, 192x192 scan pixels, 800x800 camera pixels, camera pixel size: 5.86 µm), the scan reference dataset and the Jupyter Notebook for the shift-compensation is available from the author. The dataset uploaded here is binned by a factor of 4 and shift-compensated.</li> </ul> <p><strong>C60/MoS<sub>2</sub> 4D-STEM dataset:</strong></p> <ul> <li>113x113 scan pixels</li> <li>512x512 camera pixels</li> <li>Acceleration voltage: 20kV</li> <li>Camera length: 20.56 mm</li> <li>Camera pixel size: 5.86 µm</li> <li>File location: Figure 4.zip -> scan_data_scan113x113_gzip.h5</li> </ul> <p> </p>
Data set for "Electrical control of hybrid exciton transport in a van der Waals heterostructure"
<p>Data set for "Electrical control of hybrid exciton transport in a van der Waals heterostructure"</p>
Correlations in the elastic Landau level of a graphene/NbSe2 van der Waals heterostructure
<p>Dataset and source code for the paper "Correlations in the elastic Landau level of a graphene/NbSe2 van der Waals heterostructure"</p>
This dataset contains the measurement data and its metadata of the publication "Out-of-plane corrugations in graphene based van der Waals heterostructures".
<p>This dataset contains the measurement data and its metadata of the publication "Out-of-plane corrugations in graphene based van der Waals heterostructures".</p>
Code and data for "Machine-learning-boosted ab-initio study of the thermal conductivity of Janus PtSTe van der Waals heterostructures"
<h1>Code and data for <em>Machine-learning-boosted ab-initio study of the thermal conductivity of Janus PtSTe van der Waals heterostructures</em></h1> <p> </p> <h2>Contents:</h2> <ul> <li><strong>neuralil.tar.xz</strong>: version used in the manuscript of the force-field code described in the articles <a href="https://doi.org/10.1021/acs.jcim.1c01380">A Differentiable Neural-Network Force Field for Ionic Liquids</a> and <a href="https://doi.org/10.1063/5.0146905">Deep ensembles vs committees for uncertainty estimation in neural-network force fields: Comparison and application to active learning</a>. General-purpose releases can be found <a href="https://github.com/Madsen-s-research-group/neuralil-public-releases">here</a>.</li> <li><strong>DFT_data.tar.xz</strong>: first-principles data created for training and validating the force field, stored as <a href="https://wiki.fysik.dtu.dk/ase/ase/db/db.html">ASE databases</a> in JSON format.</li> <li><strong>model_params_plain_ensemble_DEEP_413E12A9.pkl</strong>: saved parameters of the fully trained force field.</li> <li><strong>0001-Use-equipartition-occupancies.patch</strong>: patch for <a href="https://phonopy.github.io/phono3py">Phono3py</a> to use classical (equipartition) occupations instead of Bose-Einstein values.</li> </ul>
Supplementary information for: Deterministic assembly of arrays of lithographically defined WS_2 and MoS_2 monolayer features directly from multilayer sources into van der Waals heterostructures
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