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2 results for “van der Waals material”

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zenodo40/100

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

<p>Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a synthesis approach where thin crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW-mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov&ndash;de Haas quantum oscillations originating from the (111) surface state Landau levels. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth&rsquo;s Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.&nbsp;</p>

opencc-by-4.0Apr 2024View details →
zenodo36/100

Datesets and images of the publication "Probing crystallinity and grain structure of 2D materials and 2D-like van der Waals heterostructures by low-voltage electron diffraction" - DOI: 10.1002/pssa.202300148

<p>Datasets and images of the publication &quot;Probing crystallinity and grain structure of 2D materials and 2D-like van der Waals heterostructures by low-voltage electron diffraction&quot; - DOI: <a href="https://www.doi.org/10.1002/pssa.202300148">10.1002/pssa.202300148</a></p> <p>The Jupyter Notebooks for analyzing the datasets and generating all the figures are available at <a href="https://gitlab.com/JohMu/tds_hios_manuscript">https://gitlab.com/JohMu/tds_hios_manuscript</a>.</p> <p><strong>MoS<sub>2</sub> 4D-STEM dataset:</strong></p> <ul> <li>192x192 scan pixels</li> <li>200x200 camera pixels</li> <li>Acceleration voltage: 20kV</li> <li>Camera length: 10.56 mm</li> <li>Camera pixel size: 4x5.86 &micro;m = 23.44 &micro;m (original dataset with 4x4 binning)</li> <li>File location: Figure 2_3_S1.zip -&gt; 230101205338_20kV_hexz0_camz-10_posi_003_good\scan_data_bin2_centered_crop-imgNx200.h5</li> <li>The original raw dataset (23 GB, 192x192 scan pixels, 800x800 camera pixels, camera pixel size: 5.86 &micro;m), the scan reference dataset and the Jupyter Notebook for the shift-compensation is available from the author. The dataset uploaded here is binned by a factor of 4 and shift-compensated.</li> </ul> <p><strong>C60/MoS<sub>2</sub> 4D-STEM dataset:</strong></p> <ul> <li>113x113 scan pixels</li> <li>512x512 camera pixels</li> <li>Acceleration voltage: 20kV</li> <li>Camera length: 20.56 mm</li> <li>Camera pixel size: 5.86 &micro;m</li> <li>File location: Figure 4.zip -&gt; scan_data_scan113x113_gzip.h5</li> </ul> <p>&nbsp;</p>

opencc-by-4.0Jun 2023View details →

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