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91 results for “Annealing”
Influence of annealing atmosphere on performances of CIGS film by sputtering from quaternary targets
<p>Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se<sub>2</sub> (CIGS) thin film for photovoltaics. However, the device efficiency without selenization is much lower than that with selenization. To illuminate the issue, we compared the properties of absorbers including the morphology, depth profile, composition, electrical properties and the recombination mechanism comprehensively. The results revealed that the superficial Se of CIGS film annealed in Se-free atmosphere is less than that annealed in Se-containing atmosphere,and the loss of Se reduced the carrier concentration and enhanced the resistivity of CIGS film. Besides, the loss of Se caused the dominant recombination mechanism to be CIGS/CdS interface recombination. The increase of interface recombination was considered to be the reason for the reduced efficiency of the device annealed in Se-free atmosphere.</p>
Effects of Cd1-xZnxS alloy composition and post-deposition air anneal on ultra-thin CdTe solar cells produced by MOCVD
<p>Ultra-thin CdTe:As/Cd<sub>1-x</sub>Zn<sub>x</sub>S photovoltaic solar cells with an absorber thickness of 0.5 µm were deposited by metal-organic chemical vapour deposition on indium tin oxide coated boro-aluminosilicate substrates. The Zn precursor concentration was varied to compensate for Zn leaching effects after CdCl<sub>2</sub> activation treatment. Analysis of the solar cell composition and structure by X-ray photoelectron spectroscopy depth profiling and X-ray diffraction showed that higher concentrations of Zn in the Cd<sub>1‑x</sub>Zn<sub>x</sub>S window layer resulted in suppression of S diffusion across the CdTe/Cd<sub>1‑x</sub>Zn<sub>x</sub>S interface after CdCl<sub>2 </sub>activation treatment. Excessive Zn content in the Cd<sub>1-x</sub>Zn<sub>x</sub>S alloy preserved the spectral response in the blue region of the solar spectrum, but increased series resistance for the solar cells. A modest increase in the Zn content of the Cd<sub>1-x</sub>Zn<sub>x</sub>S alloy together with a post-deposition air anneal resulted in an improved blue response and an enhanced open circuit voltage and fill factor. This device yielded a mean efficiency of 8.3% over 8 cells (0.25 cm<sup>2</sup> cell area) and best cell efficiency of 8.8%.</p>
Data for "Annealing Reduces Si3N4 Microwave-Frequency Dielectric Loss in Superconducting Resonators"
<p>This directory contains the datasets and code for processing and generating the figures in the research article "Annealing Reduces Si3N4 Microwave-Frequency Dielectric Loss in Superconducting Resonators."</p> <p>This work was supported by funding from ARO Grant W911NF2310376, NSF Grant No. PHY-2317149, NSF QLCI Award OMA - 2016244, the Office of the Secretary of Defense via the Vannevar Bush Faculty Fellowship, award No. N00014-20-1-2833, and the Baur-SPIE Endowed Chair at JILA.</p>
Codes and results for self-learning entropic population annealing for interpretable materials design
<p>Codes that can reproduce the results in the paper entitled "self-learning entropic population annealing for interpretable materials design". Results, when the number of particles is 50, are included.</p>
Data set for paper 'Impact of post-ion implantation annealing on Se-hyperdoped Ge'
<p><strong>Description of the files</strong></p> <p>Files are named by the same figure order appearing in the paper and supplementary material. File types contain:<br>- *.csv: Comma separated values. <br>- *.fibps: Raw data obtained with the 3D optical profilometer, which can be opened and analyzed by ProfilmOnline at https://www.profilmonline.com/. Figures shown in the paper were croped from the top-left corner with areas of about 60x60 µm2 from the raw data. Alternatively all 3D profilometer data shown in the paper can be obtained and analyzed in https://www.profilmonline.com/shared-folder?token=S32NP82HtLC3<br>- *.tif: Image generated from scanning electron microscope. </p> <p> </p> <p><strong>Original paper:</strong> https://doi.org/10.1063/5.0213637</p> <p><strong>Supplementary material:</strong> https://doi.org/10.60893/figshare.apl.c.7322108</p> <p> </p> <p><strong>When using the dataset, please cite the original paper: Xiaolong Liu, Patrick McKearney, Sören Schäfer, Behrad Radfar, Yonder Berencén, Ulrich Kentsch, Ville Vähänissi, Shengqiang Zhou, Stefan Kontermann, Hele Savin; Impact of post-ion implantation annealing on Se-hyperdoped Ge. Appl. Phys. Lett. 22 July 2024; 125 (4): 042102. https://doi.org/10.1063/5.0213637.</strong></p> <p> </p>
The evolution of abnormally coarse grain structures in beta-annealed Ti-6Al%-4V% rolled plates, observed by in-situ investigation.
<p>The complete data set of EBSD maps used for the publication: The evolution of abnormally coarse grain structures in beta-annealed Ti-6Al%-4V% rolled plates, observed by in-situ investigation.</p>
Formation of extended thermal etch pits on annealed Ge wafers -DataSet
<p>Dataset supporting the publication: <a href="https://arxiv.org/ct?url=https%3A%2F%2Fdx.doi.org%2F10.1016%252Fj.apsusc.2018.08.075&v=9dba84e7">10.1016/j.apsusc.2018.08.075</a> <a href="https://arxiv.org/abs/1809.03404">arXiv:1809.03404</a>, including optical microscopy, atomic force microscopy, scanning electron micoscopy</p> <p> </p>
Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm (raw data from journal article)
<p>This upload contains raw data from the manuscript "Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm". The manuscript was published in Sensors and Materials, Vol. 33, No. 6 (2021) 2109–2116; DOI: https://doi.org/10.18494/SAM.2021.3425</p> <p>The upload consists of .pdf file of the manuscript and .opj files with raw data related to the figures in the manuscript. </p> <p>This work was supported in part by the European Union’s Horizon 2020 research and innovation programme (Grant No. 857558) and the Ministry of Education, Science and Technology Development of the Republic of Serbia (Project No. 43011).</p>
Dataset for: Diabatic quantum and classical annealing of the Sherrington-Kirkpatrick model
<p>The dataset includes data, Python code, and scripts for all figures in the corresponding article.</p>
Influence of annealing atmosphere on performances of CIGS film by sputtering from quaternary targets
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Data from: Network analysis by simulated annealing of taxa and islands of Macaronesia (North Atlantic Ocean)
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Annealing simulations of a lipid membrane with different amounts of transmembrane proteins
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Annealing simulations of a lipid membrane with different transmembrane proteins
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Data from: miR-122, small RNA annealing and sequence mutations alter the predicted structure of the Hepatitis C virus 5′ UTR RNA to stabilize and promote viral RNA accumulation
Annealing of the liver-specific microRNA, miR-122, to the Hepatitis C virus (HCV) 5′ UTR is required for efficient virus replication. By using siRNAs to pressure escape mutations, 30 replication-competent HCV genomes having nucleotide changes in the conserved 5′ untranslated region (UTR) were identified. In silico analysis predicted that miR-122 annealing induces canonical HCV genomic 5′ UTR RNA folding, and mutant 5′ UTR sequences that promoted miR-122-independent HCV replication favored the formation of the canonical RNA structure, even in the absence of miR-122. Additionally, some mutant viruses adapted to use the siRNA as a miR-122-mimic. We further demonstrate that small RNAs that anneal with perfect complementarity to the 5′ UTR stabilize and promote HCV genome accumulation. Thus, HCV genome stabilization and life-cycle promotion does not require the specific annealing pattern demonstrated for miR-122 nor 5′ end annealing or 3′ overhanging nucleotides. Replication promotion by perfect-match siRNAs was observed in Ago2 knockout cells revealing that other Ago isoforms can support HCV replication. At last, we present a model for miR-122 promotion of the HCV life cycle in which miRNA annealing to the 5′ UTR, in conjunction with any Ago isoform, modifies the 5′ UTR structure to stabilize the viral genome and promote HCV RNA accumulation.
OpenFF anneal + Lipid21 anneal + CHARMM36 full
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Phase field simulations of thermal annealing for all-small molecule organic solar cells
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Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing
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Efficiency Optimization of Ge-V Quantum Emitters in Single-Crystal Diamond upon Ion Implantation and HPHT Annealing
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Time Aware Simulated Annealing Experimental Results
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Data Sets for "Efficient Solution of the Number Partitioning Problem on a Quantum Annealer: A Hybrid Quantum-Classical Decomposition Approach"
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Allen Brain Atlas
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DANDI Archive for NWB datasets
DANDI is a BRAIN Initiative archive for publishing and sharing neurophysiology data, including electrophysiology, optophysiology, and behavioral data packaged as NWB and related standards.
International Brain Laboratory public data
The International Brain Laboratory public data releases expose standardized mouse decision-making experiments, including Neuropixels recordings, widefield calcium imaging, behavior, and session metadata accessed through the ONE API.
OpenNeuro
OpenNeuro is a free, open platform for sharing neuroimaging datasets, with public search, dataset pages, and download paths for web, S3, DataLad, and the OpenNeuro CLI.