Critical dimension (CD) metrology
Line width, space, and via diameter measured from top-down images, with per-feature tables.
Example outputs shown for illustration. Numbers depend on your samples and protocol.
What you get
The measurement, today
Critical dimensions are read off SEM images against cursors by hand, a handful of features at a time. Throughput is low, and the operator decides where the edge sits.
What it costs
A few nanometres of line-width drift shifts device timing and yield. When CD is measured slowly on a small sample, an excursion is caught late, after the wafers have already moved to the next layer.
From image to reviewed result
- 1
Image the pattern
Load top-down SEM or optical images of the printed features.
- 2
Calibrate the scale
Set pixels-per-nanometre from the image magnification so widths report in real units.
- 3
Measure each feature
Edges are detected and width is measured perpendicular to each line, space, or via.
- 4
Aggregate uniformity
Per-feature values roll up into within-die range and a CD uniformity map.
Scope: Measures critical dimensions from the image you provide at its native resolution. Absolute accuracy is set by your imaging tool and scale calibration, not by this analysis.
Related applications
Semiconductor defect patterns
Classify wafer-map patterns and quantify defect clusters and densities.
Line edge & width roughness (LER / LWR)
Line edge and line width roughness as 3-sigma deviation along patterned lines.
Wafer defect map & binning
Detect, locate, size, and bin defects across a wafer into a spatial map.
Send a sample image and a measurement goal
We will show the closest ConductVision workflow and flag what needs custom validation for your images.
