Critical dimension (CD) metrology
Line width, space, and via diameter measured from top-down images, with per-feature tables.
Example outputs shown for illustration. Numbers depend on your samples and protocol.
Results
Each measurement below comes from your own images, tied back to the annotated frame it came from, so results stay comparable across samples, locations, and conditions.
µm or count
Line width & space
Size and shape measured for every detected object, then summarized across the population.
In your report: Per-object table, size distribution, and summary percentiles.
µm or count
Via / contact diameter
Size and shape measured for every detected object, then summarized across the population.
In your report: Per-object table, size distribution, and summary percentiles.
per area
CD uniformity map
Findings placed in sample coordinates to reveal spatial patterns and local density.
In your report: Coordinate-referenced map, regional density, and representative images.
per area
Within-die range
Findings placed in sample coordinates to reveal spatial patterns and local density.
In your report: Coordinate-referenced map, regional density, and representative images.
per area
Per-feature table
Findings placed in sample coordinates to reveal spatial patterns and local density.
Example, not a claimed result
In your report: Coordinate-referenced map, regional density, and representative images.
Built around your image set
Use the calibrated images your team already collects, together with the locations you need to compare.
Each report includes
The artifacts your team receives, ready for review and archive.
Annotated image set
Original images with regions of interest, measurement points, masks, and finding overlays.
Measurement table
Location-indexed values, units, distributions, and QC flags in a structured export.
Method record
Calibration evidence, analysis settings, version history, and validation summary.
Confidence in every resultTraceable measurements, reviewed against your agreed reference method.
- Traceable scale
- The report records the image scale, calibration evidence, and a method-specific expanded measurement uncertainty. It does not use one product-wide accuracy number.
- Reference comparison
- The configured method is compared with your accepted reference method or reviewed annotations, and reports bias by measurement range and image condition.
- Detection performance
- Detections are evaluated against reviewed reference regions with precision, recall, and segmentation overlap, separated by the conditions that affect performance.
- Repeatability
- The locked protocol is rerun on the same inputs and on a defined repeat set. The review records variation from image acquisition, sampling, and analysis separately where possible.
What this result does not establish: Measures critical dimensions from the image you provide at its native resolution. Absolute accuracy is set by your imaging tool and scale calibration, not by this analysis.
The measurement, today
Critical dimensions are read off SEM images against cursors by hand, a handful of features at a time. Throughput is low, and the operator decides where the edge sits.
What it costs
A few nanometres of line-width drift shifts device timing and yield. When CD is measured slowly on a small sample, an excursion is caught late, after the wafers have already moved to the next layer.
From image to reviewed result
- 1
Image the pattern
Load top-down SEM or optical images of the printed features.
- 2
Calibrate the scale
Set pixels-per-nanometre from the image magnification so widths report in real units.
- 3
Measure each feature
Edges are detected and width is measured perpendicular to each line, space, or via.
- 4
Aggregate uniformity
Per-feature values roll up into within-die range and a CD uniformity map.
Not sure this is the right measurement?
Send a representative image and your measurement goal. A ConductVision scientist will confirm whether this is the right fit, or point you to the closer workflow, before you commit to a quote.
Related applications
Semiconductor defect patterns
Classify wafer-map patterns and quantify defect clusters and densities.
Line edge & width roughness (LER / LWR)
Line edge and line width roughness as 3-sigma deviation along patterned lines.
Wafer defect map & binning
Detect, locate, size, and bin defects across a wafer into a spatial map.
Send a sample image and a measurement goal
We will show the closest ConductVision workflow and flag what needs custom validation for your images.
