Semiconductor, packaging & electronics

CMP scratch & planarization inspection

Locate scratches, residual particles, dishing, and erosion signatures after chemical mechanical planarization.

Modalities:BrightfieldDarkfieldOptical profilometry
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Illustrative polished wafer surface with fine scratches and isolated particles for CMP inspection
27
Scratches
11
Particles
0.16%
Affected area

Example outputs shown for illustration. Numbers depend on your samples and protocol.

Image: Illustrative rendering (AI-generated, gpt-image-2), not a photograph of a specific wafer

What you get

Scratch map
Particle count
Dishing / erosion regions
Affected-area fraction
Per-field findings

The measurement, today

CMP review is commonly a visual screen followed by manual annotation. Fine scratches and spatial trends can be hard to compare across pads, slurries, and lots.

What it costs

Planarization defects can carry into subsequent patterning and interconnect steps. Image-linked defect classes make a pad or consumable comparison easier to review.

From image to reviewed result

  1. 1

    Load post-CMP images

    Upload optical, darkfield, or profilometry images from the wafer locations under review.

  2. 2

    Separate surface features

    Detect linear scratches, particle-like features, and regions with a different planarization signature.

  3. 3

    Measure the distribution

    Record feature dimensions, affected area, and field or wafer position.

  4. 4

    Review by lot or condition

    Export annotated images and summary tables for pad, slurry, and process comparison.

Scope: Flags surface features visible to the supplied imaging modality. Dishing, erosion, and film thickness need a calibrated reference method before being used as process-release measurements.

Send a sample image and a measurement goal

We will show the closest ConductVision workflow and flag what needs custom validation for your images.