Etch profile & high-aspect-ratio metrology
Measure trench width, depth, sidewall angle, bowing, taper, and bottom residue from cross-section images.
Example outputs shown for illustration. Numbers depend on your samples and protocol.
Image: Illustrative rendering (AI-generated, gpt-image-2), not an SEM image of a specific device
What you get
The measurement, today
High-aspect-ratio features are reviewed on a small number of manually annotated SEM cross-sections. Edge placement and the choice of measurement location can vary between analysts.
What it costs
A changing etch profile can alter downstream fill, resistance, or device behavior. Structured, image-linked measurements make profile differences visible across conditions.
From image to reviewed result
- 1
Acquire a cross-section
Load a prepared cross-section SEM, CD-SEM, or FIB-SEM image with a verified scale.
- 2
Identify the profile
Segment the feature sidewalls, opening, and bottom to establish the measurement geometry.
- 3
Measure each feature
Calculate configured width, depth, sidewall, taper, and residue measurements at consistent locations.
- 4
Compare conditions
Export overlays and per-feature tables for recipe, wafer, or lot review.
Scope: Measures geometry from prepared cross-section images. Cross-section preparation, image scale, charging, and site measurement rules determine absolute accuracy.
Related applications
Critical dimension (CD) metrology
Line width, space, and via diameter measured from top-down images, with per-feature tables.
Thin-film step coverage & uniformity
Quantify layer thickness and step coverage across planar and topographic semiconductor features.
Photoresist pattern defects
Detect resist pattern collapse, bridging, footing, and scumming after develop.
Send a sample image and a measurement goal
We will show the closest ConductVision workflow and flag what needs custom validation for your images.
